2017
DOI: 10.1016/j.optcom.2016.12.035
|View full text |Cite
|
Sign up to set email alerts
|

Single-material multilayer ZnS as anti-reflective coating for solar cell applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
15
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
5
1
1
1

Relationship

1
7

Authors

Journals

citations
Cited by 64 publications
(17 citation statements)
references
References 29 publications
1
15
0
Order By: Relevance
“…The band gap of the sprayed films is calculated using Tauc's relation using the following equation: (normalαnormalhnormalv)2=Btrue(hvEgtrue) where α , B , and Eg are the absorption coefficient, proportionality constant, and optical band gap; respectively, the absorption coefficient is calculated by the following equation: α=2.303At where A and t are the absorbance and thickness, respectively, Figure shows the band gap of pure and Ba‐doped Mn 3 O 4 thin films, the values fairly agree with the work reported in literature . It is found that band gap varies as Ba concentration increases reaching a minimum value 2.85 eV in Mn 3 O 4 :Ba1% thin films, the reduction in band gap may be due to the increase in RMS roughness and crystallite size as reported earlier, it is also observed band gap decreases with the increase in unit cell volume as well as bond lengths of (Mn 2+ O) and (Mn 3+ O) in tetrahedral and octahedral sites; respectively (see Table ) as Ba concentration increases, this behavior agrees with the findings reported in literature …”
Section: Resultssupporting
confidence: 54%
“…The band gap of the sprayed films is calculated using Tauc's relation using the following equation: (normalαnormalhnormalv)2=Btrue(hvEgtrue) where α , B , and Eg are the absorption coefficient, proportionality constant, and optical band gap; respectively, the absorption coefficient is calculated by the following equation: α=2.303At where A and t are the absorbance and thickness, respectively, Figure shows the band gap of pure and Ba‐doped Mn 3 O 4 thin films, the values fairly agree with the work reported in literature . It is found that band gap varies as Ba concentration increases reaching a minimum value 2.85 eV in Mn 3 O 4 :Ba1% thin films, the reduction in band gap may be due to the increase in RMS roughness and crystallite size as reported earlier, it is also observed band gap decreases with the increase in unit cell volume as well as bond lengths of (Mn 2+ O) and (Mn 3+ O) in tetrahedral and octahedral sites; respectively (see Table ) as Ba concentration increases, this behavior agrees with the findings reported in literature …”
Section: Resultssupporting
confidence: 54%
“…However, the solar power‐based conversion method suffers from low photoelectric conversion efficiency (around 14–19% for Si solar cells) due to light reflection, dynamic impedance changes with respect to light intensity, and material surface defects. Coating anti‐reflective coatings on the surface (typical materials include TiAl 2 , [ 205 ] SiO 2 , [ 206 ] ZnS, [ 207 ] Al 2 O 3 ‐Ta 2 O 5 ‐Al 2 O 3 [ 208 ] and thermoplastic PU‐based polymer material [ 209 ] ) can effectively solve the problem of light reflection and enhance the absorption of sunlight, so as to improve the efficiency of solar cells (the improvement is around 10–14% [ 208 ] ). For the light‐intensity‐dependent battery impedance, maximum power point tracking technology (e.g., incremental conductivity of temperature and irradiance compensation, [ 210 ] duty cycle adjustable DC‐DC converter based on meteorological information [ 211,212 ] ) can be implemented to match the load impedance with the solar cell.…”
Section: Challenges and Future Developmentmentioning
confidence: 99%
“…Several methods to reduce the reflectance and enhance the efficiency of solar panels have been studied. Coating may be realized by both chemical and physical methods, such as sol–gel dip-coating 1 , spin coating 2 , nanoimprint lithography using sol–gel materials 3 , plasma surface oxidation 4 , RF sputtering 5 7 , and thermal evaporation 8 . In this work, we propose a simple and inexpensive sparking process to produce an AR film.…”
Section: Introductionmentioning
confidence: 99%