Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

Babichev, A. V.; Blokhin, S. A.; Gladyshev, A. G.; Karachinsky, L. Ya.; Novikov, I. I.; Blokhin, A. A.; Bobrov, M. A.; Maleev, N. A.; Andryushkin, V. V.; Kolodeznyi, E. S.; Денисов, Д. В.; Kryzhanovskaya, Natalia V.; Voropaev, K. O.; Ustinov, V. M.; Egorov, A. Yu.; Li, Hui; Tian, Sicong; Han, Shuyi; Sapunov, Georgiy; Bimberg, D.

doi:10.1109/lpt.2023.3241001

Cited by 14 publications

(12 citation statements)

References 26 publications

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“…For long wavelength VCSELs, with the wavelengths of 1310 and 1550 nm, the strained InGaAs QWs based on InP substrates are used to achieve a large differential gain [21,22]. The buried tunnel junction (BTJ) are used to confine the light and the current and to lower the resistance of the device, so as to decrease the parasitics effect on the cutoff frequency of the VCSEL [23][24][25].…”

Section: Energy Efficiency Of High-speed Vcselsmentioning

confidence: 99%

“…However, the ternary DBR, based on InP substrates, need more pairs of DBR to have enough confinement because of the low difference of the index value, and so many pairs of the DBR together with the Auger recombination will result to the problem of the heat extraction. The wafer-fusion technique of an InP-based optical cavity with a GaAs-based top and bottom Al(Ga)As/GaAs DBR is used to solve such a problem [21,26]. Table 1 summarizes the state of the art of energy efficiency of high-speed from 850 to 1550 nm in the last approximate 10 years.…”

Section: Energy Efficiency Of High-speed Vcselsmentioning

confidence: 99%

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Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

2023

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The current progress of energy-efficient high-speed VCSELs based on GaAs substrates is presented. Novel approaches for the design of VCSELs are presented, potentially leading to larger bandwidth bit rates and lower power consumption. The first approach is based on the optimization of the VCSEL photon lifetime. The second one introduces a novel design based on oxidizing the apertures from multiple etched holes of varying geometries. These designs are also essential for improving the energy efficiency of future modules by optimizing the match of the electronic driver and the photonic device.

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Section: Energy Efficiency Of High-speed Vcselsmentioning

confidence: 99%

Section: Energy Efficiency Of High-speed Vcselsmentioning

confidence: 99%

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

2023

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“…Alternative approaches, including bonded dielectric DBRs and high contrast gratings (HCG), have been proposed by various groups. However, these processes are complex for mass production. − Recently, PCSELs with emitting wavelengths around 1.3–1.5 μm have been developed and reported. − PCSELs do not require DBRs for a resonant cavity, further highlighting their advantages in this wavelength range. Moreover, due to the scaling law of the photonic band, PC structures are large enough to be generated using deep ultraviolet (DUV) lithography instead of electron-beam lithography, facilitating volume production.…”

Section: Introductionmentioning

confidence: 99%

Metal Organic Chemical Vapor Deposition-Grown High-Power Photonic-Crystal Surface-Emitting Lasers toward L Band

Chen,

Chang,

et al. 2023

Crystal Growth & Design

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High-power lasers emitting in the L band wavelength range are highly desirable for various applications, including light detection and ranging, industrial applications, military applications, gas sensing, and optical communication. In this study, we present our research on InP-based photonic-crystal surface-emitting lasers (PCSELs) designed to achieve high-power emission in the L band while maintaining a compact device size. To enable vertical laser emission, we incorporated embedded air voids within a 2D photonic crystal (PC) structure by epitaxial overgrowth. The PC was carefully designed to facilitate lasing at the PC band edge of the Γ point. While the fabrication of InP-based distributed feedback edge-emitting lasers with epitaxial regrowth and p-type cladding layers has reached commercial maturity, the process of retaining air holes presented unique challenges in our work. We conducted an investigation into the regrowth processes, aiming to preserve the air voids while achieving an atomically flat p-type surface for our flip-chip device structure. The flat surface is crucial to minimize scattering losses and ensure optimal reflectivity of the p-side metal, resulting in higher output efficiency. The PCSELs demonstrated in our study achieved an optical power of more than 150 mW in the L band, utilizing an aperture of only 280 μm in diameter. We anticipate that with further optimization, we can achieve even higher power and efficiency levels.

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“…Laser diodes are the core components of optical storage systems, photoacoustic spectroscopy, barcode readers and in optic communication systems. [1][2][3][4][5][6] Amongst distinct types of laser diodes, Verticalcavity surface-emitting laser (VCSEL) and edge-emitting laser diodes are most prominent. The main difference between these two diodes is the direction of emitted light.…”

mentioning

confidence: 99%

“…In addition, VCSELs have a much smaller wavelength drift with temperature compared to edge-emitting lasers (EEL) and the power consumption of a VCSEL is less compared to the EEL. [1][2][3] Performance of optoelectronic devices depends on the quality of materials and manufacturing, among other variables. The defects in used materials, such as dislocations, vacancies, or impurities, introduce localized states and hinder carrier mobility and recombination rate, leading to reduced performance of electronic devices.…”

mentioning

confidence: 99%

Effect of High Current Density Pulses on Performance Enhancement of Optoelectronic Devices

Rahman,

Glavin,

Haque

et al. 2024

ECS J. Solid State Sci. Technol.

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Thermal annealing is commonly used in fabrication processing and/or performance enhancement of electronic and opto-electronic devices. In this study, we investigate an alternative approach, where high current density pulses are used instead of high temperature. The basic premise is that the electron wind force, resulting from the momentum loss of high-energy electrons at defect sites, can mobilize and eliminate internal defects. The proposed technique is demonstrated on commercially-available optoelectronic devices with two different initial conditions. The first study involved a thermally-degraded edge-emitting laser diode. About 90% of the resulting increase in forward current was mitigated by the proposed annealing technique where very low duty cycle was used to suppress any temperature rise. The second study was more challenging, where a pristine vertical-cavity surface-emitting laser was subjected to similar processing to see if the technique can enhance performance. Encouragingly, this treatment yielded a notable improvement of over 20% in the forward current. These findings underscore the potential of electropulsing as an efficient in-operando technique for damage recovery and performance enhancement in optoelectronic devices.

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Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

Cited by 14 publications

References 26 publications

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication

Metal Organic Chemical Vapor Deposition-Grown High-Power Photonic-Crystal Surface-Emitting Lasers toward L Band

Effect of High Current Density Pulses on Performance Enhancement of Optoelectronic Devices

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