Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

Lv, Bingbing; Tang, Yingwen; Lou, Shiyun; Xu, Yanling; Zhou, Shu

doi:10.1039/c6tc01402j

Cited by 14 publications

(5 citation statements)

References 60 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The cubic phase of GaN (c-GaN) is inherently polarization-free in the ⟨100⟩ growth direction due to its centrosymmetric atomic arrangement . Additionally, c-GaN has benefits such as high carrier mobility, high p-type conductivity, high electron drift velocity, small Auger losses, high optical gain, high radiative efficiency, , and cleavage planes.…”

mentioning

confidence: 99%

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

et al. 2018

View full text Add to dashboard Cite

Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photoand cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Timeresolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the ⟨112 ̅ 0⟩ and ⟨110⟩ directions of hexagonal GaN and c-GaN, respectively. Temperaturedependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ~29% at room temperature along with intrinsic and extrinsic defect energy levels of ~124 and ~344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Overall, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.

show abstract

mentioning

confidence: 99%

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Ранее было показано, что применение в качестве функциональной подложки нанопористой матрицы кремния позволило сформировать на ней массив нанокристаллов GaN, обладающих желтой люминесценцией, аналогичной той, которую мы наблюдаем в нашей работе, но меньшей интенсивности [52]. Показано, что на основе такого высокоэффективного желтого свечения GaN могут быть сконструированы белые светоизлучающие диоды p−n [53]. Это открывает новые горизонты в использовании оптических явлений в GaN.…”

Section: обсуждение полученных результатовunclassified

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Seredin¹,

Голощапов²,

Zolotukhin³

et al. 2020

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Комплексом структурно-спектроскопических методов диагностики исследовано влияние переходного слоя нанопористого кремния на оптические свойства слоев GaN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота (МПЭ ПА) на темплейтах SiC/por-Si/c-Si. Впервые показано, что использование технологии МПЭ ПА для синтеза GaN на виртуальной подложке SiC/por-Si/c-Si позволило нам получить пленку GaN со значительно более высоким структурным качеством и оптическим совершенством и при значительно более низкой температуре роста, чем в аналогичных работах, в которых демонстрировался рост с использованием пористых подложек Si. Использование нанопористого por-Si слоя позволяет улучшить структурные и морфологические свойства эпитаксиального слоя GaN, а также добиться у него уникальных оптических и электрофизических характеристик. Полученные данные послужат важным материалом для понимания основ физики наногетероструктур GaN/SiC/por-Si, способствуя их потенциальному применению в оптоэлектронике. Ключевые слова: гибридные гетероструктуры, карбид кремния, нитрид галлия, нанопористый кремний, молекулярно-пучковая эпитаксия с плазменной активацией азота.

show abstract

“…CGO is an intrinsic p‐type material and one of the delafossite family, with excellent hole mobility . In contrast to CGO, n‐type zinc oxide (ZnO) has a wide direct bandgap (3.37 eV) and large exciton binding energy (60 meV) at room temperature . In the UV optical detection system, when 1D ZnO nanowires (NWs) were combined with other low‐dimensional materials such as metals, semiconductor nanoparticles, and 1D nanotubes and 2D materials, the increase of the specific surface area improves the detection performance.…”

Section: Introductionmentioning

confidence: 99%

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO₂ Nanoplate/ZnO Nanowire Heterojunctions

Wang

et al. 2020

Physica Status Solidi (b)

View full text Add to dashboard Cite

This study reports ultraviolet (UV) photodetectors based on CuGaO 2 (CGO) nanoplates (NPs) and Zn-doped CGO (CZGO) NP/ZnO nanowire (NW) heterojunctions. The vertical arrays of ZnO NWs are uniformly grown on the surface of hexagonal CZGO NPs and form a high-density p-n junction. The heterojunctions have better optoelectronic performance parameters than pure CGO NPs. Especially, the responsivity value of CZGO NP/ZnO NW heterojunctions reaches 0.12 A W À1 , and the photo-to-current ratio is estimated to be 4.5. This work offers a new idea for the rational design of optoelectronic devices from the synergetic effect of p-type CZGO NPs and n-type nanostructures.

show abstract

Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

Abstract: Cubic phase (zinc-blende) GaN (referred to as c-GaN)-based phosphor-free white light emitting diodes (LEDs) can exhibit superior characteristics and ultrahigh efficiency compared with conventional hexagonal phase (wurtzite) GaN (referred as h-GaN)-based examples.

Cited by 14 publications

References 60 publications

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO₂ Nanoplate/ZnO Nanowire Heterojunctions

Contact Info

Product

Resources

About

Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

Abstract: Cubic phase (zinc-blende) GaN (referred to as c-GaN)-based phosphor-free white light emitting diodes (LEDs) can exhibit superior characteristics and ultrahigh efficiency compared with conventional hexagonal phase (wurtzite) GaN (referred as h-GaN)-based examples.

Cited by 14 publications

References 60 publications

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO2 Nanoplate/ZnO Nanowire Heterojunctions

Contact Info

Product

Resources

About

Study of the Optoelectronic Properties of Ultraviolet Photodetectors Based on Zn‐Doped CuGaO₂ Nanoplate/ZnO Nanowire Heterojunctions