Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

Abstract

Some decades ago single photon detection used to be the terrain of photomultiplier tube 9 (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several 10 disadvantages such as low quantum efficiency, overall dimensions, and cost, making 11 (DCR) has been conducted. Our results show a dark count rate increase with the size of 28 the photodiodes and the temperature (at T=22.5°C, the DCR of a 10 µm-photodiode is 29 2020 count.s-1 while it is 270 count.s-1 at T=-40°C for a overvoltage of 800 mV). A small 30 pixel size is desirable, because the DCR per unit area decreases with the pixel size. We 31 also found that the adjustment of overvoltage is very sensitive and depends on the 32 temperature. The temperature will be adjusted for the subsequent experiments.

Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 μm technology

“…The photodiode's optical device was fabricated in the front end of Line section of the CMOS 0.35 µm, it is the PHDNWA850 (N-well and P-substrate) a ready model taken from the AMS toolkit. The photodiode responsivity characteristics and other features can be found in [26].…”