2017
DOI: 10.1109/lpt.2017.2735625
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Single Photon Counting Spatial Uniformity of 4H-SiC APD Characterized by SNOM-Based Mapping System

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Cited by 12 publications
(8 citation statements)
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“…With increasing bias and the onset of gain, the response becomes limited to one side of the mesa, with the optically dead zone expanding further along the right-side of the scan and clear hotspots developing at the top and left edges of the left side with increasing gain from 10 3 to 10 6 , consistent with the results of Guo et al [15]. However, an increase in the spatial uniformity is observed at the highest bias examined, a gain of ≈ 10 7 , which is similar to the results of Cai et al [14]. Studies of spatial uniformity in the same device operating in Geiger mode are shown in Figure 3.…”
Section: Spatial Uniformity Resultssupporting
confidence: 89%
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“…With increasing bias and the onset of gain, the response becomes limited to one side of the mesa, with the optically dead zone expanding further along the right-side of the scan and clear hotspots developing at the top and left edges of the left side with increasing gain from 10 3 to 10 6 , consistent with the results of Guo et al [15]. However, an increase in the spatial uniformity is observed at the highest bias examined, a gain of ≈ 10 7 , which is similar to the results of Cai et al [14]. Studies of spatial uniformity in the same device operating in Geiger mode are shown in Figure 3.…”
Section: Spatial Uniformity Resultssupporting
confidence: 89%
“…A challenge recently identified for these devices is the spatial non-uniformity of these detectors operating in Geigermode. Specifically, Cai et al observed that the Geiger-mode spatial non-uniformity of SiC APDs in which light entered through the p-doped side of the diode was highly dependent upon applied excess bias [14]. At low bias, these devices had large optically dead zones, where the photo-counts were not discernable from dark counts, while two hot-spots located on one side of the mesa were responsible for the detector's photo-response.…”
Section: Introductionmentioning
confidence: 99%
“…With double-gate method 17 , further experimental result on P ap distribution shows that once an avalanche occurs the subsequent P ap is roughly 100% and after several hundred nanoseconds P ap decreases down to 0 18 , which implies that a) hailu@nju.edu.cn b) zhangjun@ustc.edu.cn the lifetime of trapped carrier could be quite short. On the other hand, the distribution of avalanche gain across the active area of 4H-SiC SPAD exists severe nonuniformity, which results in large variations of avalanche amplitudes 16,19 and thus the nonuniformity of photon detection efficiency (PDE) 20 .…”
Section: Introductionmentioning
confidence: 99%
“…Owing to the advantages such as internal photoelectric gain, small size, low driving voltages, high efficiency, and fast response, focal-plane APD arrays bring about new three-dimensional (3D) imaging techniques which provide much wealthier and more accurate information for object recognition and identification [9]. Advanced 3D imaging technologies are strongly required in radar systems including laser detection and ranging (LADAR), so the focal-plane APDs and their LADAR applications were widely and deeply studied in recent years [10][11][12][13][14][15][16][17][18][19][20]. For the purpose of more progress in the future, it is necessary to take an overview on the present research and production of APD arrays.…”
Section: Introductionmentioning
confidence: 99%
“…Princeton Lightwave also succeeded in producing focal-plane single photon avalanche detector (SPAD) arrays and commercializing their single-photon camera based on the SPADs [11]. The research and production of other groups [12][13][14] may also be valuable as references for future developments. In this chapter, we review the research and application of the focalplane APDs in Southwest Institute of Technical Physics and University of Electronic Science and Technology of China [15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%