Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

Rowe, M. W.; Gansen, Eric J.; Greene, M.; Hadfield, Robert H.; Harvey, Todd E.; Su, M. Y.; Nam, Sae Woo; Mirin, Richard P.; Rosenberg, Danna

doi:10.1063/1.2403907

Cited by 57 publications

(33 citation statements)

References 8 publications

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“…[9][10][11][12][13] Hereby, the RTD is serving as an internal amplifier of weak electric signals caused by photogenerated charge carriers. Extensive work has been done, e.g., to demonstrate single photon detection and even photon counting, 9,13,14 yet some dynamic effects that shape the RTD photocurrentvoltage relation itself have remained uncharacterized. As demonstrated here, the photocurrent response is built by the intertwining of various processes of different nature.…”

Section: Photocurrent-voltage Relation Of Resonant Tunneling Diode Phmentioning

confidence: 99%

Photocurrent-voltage relation of resonant tunneling diode photodetectors

Pfenning

Hartmann

Dias

et al. 2015

Applied Physics Letters

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Section: Photocurrent-voltage Relation Of Resonant Tunneling Diode Phmentioning

confidence: 99%

Photocurrent-voltage relation of resonant tunneling diode photodetectors

Pfenning

Hartmann

Dias

et al. 2015

Applied Physics Letters

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“…19,20 As shown in Fig. 1(a), the narrow semiconductor channel is constructed by etching two L-shape insulated grooves tailoring the boundary of a wide a Author to whom correspondence should be addressed.…”

Section: Methodsmentioning

confidence: 99%

“…12,16 By contrast, a less destructive type of SPD based on quantum dot field-effect transistor (QDFET) can safely bound the photogenerated carriers to realize spin coherent detection and has already been proved to be effective in single-photon detection. [17][18][19] In this letter, we propose and demonstrate a novel QDs embedded asymmetric self-gated nanowire detector based upon field effect transistor structure for photo-detection (QD-ASN-FET-PD). In this unique device structure of QD-ASN-FET-PD, the asymmetric self-gated nanowire channel is designed to have high differential conductance gain and high sensitivity, along with absorption and QD carrier-trapping layers.…”

Section: Introductionmentioning

confidence: 99%

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

et al. 2015

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We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 106A/W at 50 K.

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“…The QDOGFET structure and principles of operation are illustrated in Fig. 1(a), and are described in further detail by Rowe et al (2006), Gansen et al (2007) and Rowe et al (2008). A photon is detected when it is absorbed in the structure and electrically charges a QD with a photo-generated hole carrier.…”

Section: Introductionmentioning

confidence: 99%

“…The photoconductive gain associated with the persistent photoconductivity makes QDOGFETs sensitive enough to detect individual photons of light. Previous reports demonstrate that when cooled to 4 K, QDOGFETs exhibit single-photon sensitivity with high internal quantum efficiency (Rowe et al, 2006) and, moreover, can accurately discriminate between the detection of 0, 1, 2, and 3 photons 83% of the time (Gansen et al, 2007;Rowe et al, 2008). While persistent photoconductivity lasting for hours has been demonstrated for temperatures as high as 145 K (Finley et al, 1998), previous demonstrations of the single-photon sensitivity of QDOGFETs have been limited to operating temperatures of 4 K, where thermally activated noise sources are minimized.…”

Section: Introductionmentioning

confidence: 99%

Operating Temperature Dependence of QDOGFET Single-Photon Detectors

Gansen¹,

Harrington²,

Nehls³

2012

Proc. Wisc. Space Conf.

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Abstract:We report on the temperature dependence of the photosensitivity of a quantum dot, optically gated, field-effect transistor (QDOGFET) that uses self-assembled semiconductor quantum dots embedded in a high-electron-mobility transistor to detect individual photons of light. Paramount to the operation of the device is differentiating weak, photo-induced signals from random fluctuations associated with electrical noise. To date, QDOGFETs have only been shown to be single-photon sensitive when cooled to 4 K. Here, we study noise spectra of a QDOGFET for sample temperatures ranging from 7-60 K and discuss how the noise affects the sensitivity of the device when operated at elevated temperatures. We show that the QDOGFET maintains single-photon sensitivity for temperatures up to 35-40 K where increases in operating temperature can be traded for decreases in signal-to-noise ratio. IntroductionSingle-photon detector (SPD) development is crucial to the advancement of quantum information technologies and measurement science. More effective SPDs are needed to improve the security of quantum communication systems based on quantum-key distribution (Hiskett et al., 2006) and to extend the link lengths and data rates of deep-space communications (Mendenhall et al., 2007;Hemmati et al., 2007;Boroson et al., 2004). SPDs are fundamental tools for quantum optics experiments and also impact the areas of observational astronomy, medical diagnosis and imaging, and light detection and ranging (LIDAR) (Priedhorsky et al., 1996). In general, desirable characteristics for SPDs include high detection rates, low dark counts, and high detection efficiency. Some applications require detectors that are not only sensitive to single photons, but that can also count the number of incident photons that arrive simultaneously. Photon-number resolution is critical for the realization of linear optics quantum computing (Knill et al., 2001), impacts the security of quantum communications (Brassard et al., 2000), and is useful for studying the quantum nature of light (Giuseppe et al., 2003;Waks et al., 2004;Achilles et al., 2006;Waks et al., 2006). In addition, for many commercial applications, SPDs must be compact and exhibit modest power and cooling requirement for operation.

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Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

Cited by 57 publications

References 8 publications

Photocurrent-voltage relation of resonant tunneling diode photodetectors

Photocurrent-voltage relation of resonant tunneling diode photodetectors

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

Operating Temperature Dependence of QDOGFET Single-Photon Detectors

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