Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires

Yang, Shuang; Xiu-Ming, Dou; Yu, Ying; Ni, Haiqiao; Niu, Zhichuan; De-Sheng, Jiang; Sun, Bo

doi:10.1088/0256-307x/32/7/077804

Cited by 11 publications

(6 citation statements)

References 17 publications

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“…The photon counting rates at the saturation point of the excitation power for typical short and long lifetime QDs are approximately 1 MHz and 0.03 MHz, respectively. The former QDs responsible for ZB QDs can be applied to ideal single-photon sources, 25 whereas the latter one responsible for WZ QDs is more suitable for use as a single-photon quantum storage device or a photodetector.…”

Section: / 12mentioning

confidence: 99%

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

et al. 2015

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We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs have been investigated by measuring photoluminescence (PL) and time-resolved PL spectra upon application of hydrostatic pressure. We find that the ZB QDs are of direct band gap transition with short recombination lifetime (~1 ns) and higher pressure coefficient (75-100 meV/GPa). On the contrary, the WZ QDs undergo a direct-to-pseudodirect bandgap transition as a result of quantum confinement effect, with remarkably longer exciton lifetime (4.5-74.5 ns) and smaller pressure coefficient (28-53 meV/GPa). These fundamentally physical properties are further examined by performing state-of-the-art atomistic pseudopotential calculations.

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Section: / 12mentioning

confidence: 99%

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

et al. 2015

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“…Benefiting from advances in modern nanoscience and nanotechnology, QDs for their applications in photonics and optoelectronics have attracted tremendous attention. QD, as a simple stationary atom with the tunability of optical properties [43,44] exhibiting abundant physical phenomena of quantum confined systems, are attractive for they present optical responses in a widely tuned spectral range, which paves the way for numerous potential applications, [45] such as single photon sources, [46,47] quantum dot qubit, [48,49] and QD mechanical resonator. [50] The magnetic field generated by the magnetic tip of the NR is 𝐵 tip G m ẑ, where G m is the magnetic field gradient and ẑ = a 0 (a † + a) is the position operator, the magnetic field is proportional to the position operator.…”

Section: Model and Theorymentioning

confidence: 99%

Room temperature nonlinear mass sensing based on a hybrid spin-nanoresonator system*

Yang¹,

Chen²

2020

Chinese Phys. B

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We present a room temperature nonlinear mass sensing based on a hybrid spin-nanoresonator system with the microwave pump–probe technique and the spin readout technique, which includes a single spin of nitrogen–vacancy (NV) center in diamond and a nanomechanical cantilever. The resonance frequency of the nanoresonator can be measured with the nolinear Kerr spectrum, and the parameters that influence the nolinear Kerr spectrum are also investigated. Further, according to the relationship between frequency shifts and variable mass attached on the nanoresonator, this system can also be used to detect the mass of DNA molecules with the nolinear Kerr spectrum. Benefiting from the single spin of the NV center in diamond has a long coherence time at 300 K, the hybrid system can realize room temperature mass sensor, and the mass response rate can reach 2600 zg/Hz.

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“…49 In other words, the polarization perpendicular to the nanowire axis generally exhibits very low degree of polarization. 50,51 Thus, X and XX emission lines in Figure 4c from the vertical nanowire show a very weak intensity variation along the angle of linear polarization, which indicates that X and XX emission peaks are from the vertically standing and symmetric nanowire. With this regard, the vertical nanowire in this study not just provides the 3D quantum confinement, but also preserves the genuine and intrinsic optical properties of QDs without perturbing the polarizations, which would be an ideal platform for entangled photon generation as well as single photon generation.…”

Section: ■ Introductionmentioning

confidence: 99%

InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications

Chang

Kim

Hubbard

et al. 2022

ACS Appl. Mater. Interfaces

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Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building nextgeneration quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their powerdependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.

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Single-Photon Emission from GaAs Quantum Dots Embedded in Nanowires

Cited by 11 publications

References 17 publications

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

Room temperature nonlinear mass sensing based on a hybrid spin-nanoresonator system*

InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications

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