InAsP Quantum Dot-Embedded InP Nanowires toward Silicon Photonic Applications

Abstract

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating approach to building nextgeneration quantum light sources toward unbreakable secure communications. However, it has been challenging to integrate position-controlled QDs operating at the telecom band, which is a crucial requirement for practical applications. Here, we report monolithically integrated InAsP QDs embedded in InP nanowires on silicon. The positions of QD nanowires are predetermined by the lithography of gold catalysts, and the 3D geometry of nanowire heterostructures is precisely controlled. The InAsP QD forms atomically sharp interfaces with surrounding InP nanowires, which is in situ passivated by InP shells. The linewidths of the excitonic (X) and biexcitonic (XX) emissions from the QD and their powerdependent peak intensities reveal that the proposed QD-in-nanowire structure could be utilized as a non-classical light source that operates at silicon-transparent wavelengths, showing a great potential for diverse quantum optical and silicon photonic applications.

Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires

“…74 The area of NWQDs is extremely broad with application examples in several elds such as quantum technologies 75,76 and nanophotonics. 77,78…”

Carrier separation in type-II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowires

“…[14][15][16] The latter effects are observed in nanowire quantum dots (NWQDs), i.e., small optically active axial insertions of a lowbandgap semiconductor inside a NW composed of a largebandgap semiconductor forming zero-dimensional traps for electrons and holes. [17][18][19][20][21][22] The heterostructures can be classified either as type-I, type-II, or type-III depending on the relative bandgap offsets. In par-ticular, type-II heterostructures are characterized by a staggered bandgap alignment, which means that the energies of both conduction-band and valence-band edges of one semiconductor are shifted toward higher energy with respect to the corresponding band edges of the other semiconductor.…”

“…, small optically active axial insertions of a low-bandgap semiconductor inside a NW composed of a large-bandgap semiconductor forming zero-dimensional traps for electrons and holes. 17–22…”

Impact of Photo-induced Physical and Chemical Processes on Lateral Transport of Excitons in Quantum Dot Thin Films

“…Transport of excitation energy without the exchange of carriers or photons is in the front line of ongoing research toward novel optical and energy devices, − sub-wavelength energy waveguide designs, and understanding of energy transfer in nanoscale systems and biological materials. − In many semiconductor systems, energy transport is based on the spatial transfer of excitons. Such a process has been studied in different types of systems, including biological systems, transition-metal dichalcogenide monolayers, quantum well structures, and quantum dot (QD) systems. − Investigation of exciton transport in QD systems is of particular interest as it can occur in three-, two-, and even one-dimensional structures. , As a result, it can have widespread applications, particularly for sensitized solar cells, ,− quantum computing, , and quantum dot lasers . QD systems are also interesting for investigation of Förtster resonance energy transfer (FRET), including the control of its rate via plasmonic effects. ,− …”