Single photon emission from nitrogen delta-doped semiconductors

Yaguchi, Hiroyuki

doi:10.1117/12.865770

Cited by 3 publications

(2 citation statements)

References 24 publications

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confidence: 99%

“…Isoelectronic (also named isovalent) doping is similarly frequent in the case of binary (III-V or II-VI) semiconductor compounds due to the usual important miscibility between elements of the same column and/or valence. It can lead to bandgap tuning [7,8], obtaining of new properties [9,10] or crystalline improvement [11,12].In the particular cases of column IVB semiconductors, the isoelectronic doping concerns only elements of the same column which reduces substantially the possibilities. Important solubility exists…”

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Growth and doping of silicon carbide with germanium: a review

Ferro

2021

Critical Reviews in Solid State and Materials Sciences

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This paper review the research works made so far in associating Ge isoelectronic element to SiC crystals, either by incorporating it inside SiC matrix or for assisting SiC epitaxial growth. The incorporation mechanism and level of incorporation of Ge in SiC during crystal growth with different techniques (sublimation, chemical vapor deposition, vapor-liquid-solid) are compared and discussed. Ge doping level as high as 2-3x10 20 at.cm -3 can be reached without affecting SiC crystalline quality but generating some strain. Higher Ge incorporation levels up to few at% can be reached using farer-toequilibrium conditions such as ion implantation or molecular beam epitaxy. The former allows retaining 4H-SiC polytype while the latter leads exclusively to defective 3C-SiC polytype. Adding Ge to SiC crystal growth was also used for promoting 3C-SiC heteroepitaxy on Si and on -SiC substrates, the latter case being more successful. The reported modifications and improvements of SiC crystalline and electronic properties by the incorporation of Ge element are discussed in order to draw or clearer picture of SiC:Ge material. Based on such discussion, some short-and long-term perspectives are proposed 1-IntroductionThe development of any semiconductor based technology requires mastering and understanding a high number of fabrication steps which can be very complex. On material aspect, crystalline quality and purity are essential. The former allows reaching the predicted properties of the material while the latter allows working on the intentional doping type and level of the semiconductor. The n and p type doping elements are usually well identified for each semiconductor and their incorporations using different elaboration techniques are widely documented. The incorporation of metallic impurities is also commonly investigated for improving the semiconductor properties such as increasing resistivity (Fe in GaN [1], V in 4H-SiC [2]), tuning optical emission (Er in GaN [3] or Si [4]) or providing magnetic properties (Mn in GaAs [5] or Ge [6]). Isoelectronic (also named isovalent) doping is similarly frequent in the case of binary (III-V or II-VI) semiconductor compounds due to the usual important miscibility between elements of the same column and/or valence. It can lead to bandgap tuning [7,8], obtaining of new properties [9,10] or crystalline improvement [11,12].In the particular cases of column IVB semiconductors, the isoelectronic doping concerns only elements of the same column which reduces substantially the possibilities. Important solubility exists

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Section: -Introductionmentioning

confidence: 99%

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confidence: 99%

Growth and doping of silicon carbide with germanium: a review

Ferro

2021

Critical Reviews in Solid State and Materials Sciences

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Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

Okubo

Yagi

Hijikata

et al. 2014

Physica Status Solidi (a)

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We have studied the temperature dependence of optical transitions in dilute GaAsN alloys using photoreflectance (PR). A delocalized‐state transition is clearly observed in PR spectra while several localized‐state emission lines due to isoelectronic centers appear in photoluminescence spectra. The energy of optical transitions observed in PR spectra is in agreement with the excitonic transition energy in photoluminescence excitation spectra, clearly showing that the optical transitions in PR spectra are excitonic transitions. We analyzed the temperature dependence of the excitonic transition energies using the Bose–Einstein statistical expression, and found that even dilute alloys follow the same trend as GaAsN alloys with higher nitrogen concentrations. We discuss the coexistence of localized and delocalized states in dilute GaAsN alloys in terms of the random distribution of N atoms.

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Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

Jin¹,

Yagi²,

Hijikata³

et al. 2015

Jpn. J. Appl. Phys.

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We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy using secondary ion mass spectroscopy. It was found that a significant number of Er atoms segregate to the growing surface at temperatures of 400 °C and above and that the segregation decay length is approximately 0.5 µm at 500 °C, indicating that the incorporation ratio of Er atoms into GaAs is less than 10 %3 . In contrast to the growth at higher temperatures, GaAs overlayer growth at a temperature as low as 300 °C is effective in suppressing the surface segregation of Er and obtaining δ-doped structures.

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Single photon emission from nitrogen delta-doped semiconductors

Cited by 3 publications

References 24 publications

Growth and doping of silicon carbide with germanium: a review

Growth and doping of silicon carbide with germanium: a review

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

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