Single-pole-double-throw switch based on toggle switch

Schauwecker, B.; Strohm, K.M.; Mack, T.; Simon, Winfried; Luy, J.-F.

doi:10.1049/el:20030452

Cited by 15 publications

(6 citation statements)

References 2 publications

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“…Even on more complex switch structures such as single pole double throw (SPDT) [9] or double pole double throw (DPDT) [10] architectures it is possible to route signals to different ports with low loss and high isolation. An appropriate arrangement of SPDT or DPDT switches in a matrix allows the routing of n-input to m-output ports.…”

Section: Basic DC and Rf Performancementioning

confidence: 99%

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Toggle switch: investigations of an RF MEMS switch for power applications

Simon

Mack

Schauwecker

et al. 2005

IEE Proc., Microw. Antennas Propag.

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Section: Basic DC and Rf Performancementioning

confidence: 99%

“…The Toggle Switch, developed by DaimlerChrysler and IMST [8][9][10][11][12][13], consists of a movable metallic cantilever in the signal line of a coplanar waveguide (CPW) environment (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

Toggle switch: investigations of an RF MEMS switch for power applications

Simon

Mack

Schauwecker

et al. 2005

IEE Proc., Microw. Antennas Propag.

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“…Anyway, full-wave EM simulation is often mandatory to accurately predict the behavior of complex structures with several MEMS devices and line discontinuities [1], [8]. In fact, these structures consist of closely spaced elements (transmission lines, T-junctions, air-bridges, MEMS switches, etc.)…”

Section: Introductionmentioning

confidence: 99%

Mastering parasitics in complex MEMS circuits

Arcioni

Conciauro

Farinelli

et al. 2005

2005 European Microwave Conference

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Because of the tight coupling between closely spaced 3-D elements, parasitic effects often degrade the overall performance of complex MEMS circuits. A Single-Pole-Double-Throw (SPDT) switch in CPW technology consisting of a T-junction with one series-resistive and one shunt-capacitive MEMS switches per arm has been fabricated and tested. Parasitic coupling is shown to significantly affect the isolation of the isolated arm. While full-wave EM simulators would lead to unaffordable computational efforts to master such phenomena, a simple yet accurate planar approach recently presented is employed to effectively model and predict the behaviour of both the whole SPDT and its components. Having identified the portions of the circuit responsible for the spurious coupling, the planar approach has been used to modify the geometry of the shunt MEMS so as to minimize the parasitics, yielding a significantly improved performance of the SPDT.

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“…It has already been shown that RF SPDT switches utilizing micro-electromechanical systems (MEMS) technology can be an attractive alternative to their solid state counterparts due to their low insertion loss, high isolation and low power consumption at microwave frequencies [1][2][3][4][5]. These types of MEMS switches utilize electrostatic actuation to change the signal path and generally require two independent voltages to switch between the two ports.…”

Section: Introductionmentioning

confidence: 99%