Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

Wijnheijmer, A. P.; Garleff, J. K.; Teichmann, K.; Wenderoth, M.; Loth, Sebastian; Koenraad, P. M.

doi:10.1103/physrevb.84.125310

Cited by 28 publications

(32 citation statements)

References 28 publications

(57 reference statements)

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“…The bias dependence of the energy level of the localized acceptor state E A is described by the lever arm α = e −1 dE A /dV . 18,19 Here we present a direct measurement of the lever arm and measure the shift E = −αe(V onset − V FB ) by studying transport through individual subsurface acceptors where we directly determine: (i) the potential due to the negatively charged nucleus, (ii) the flat-band voltage and depth of the acceptors from direct tunneling to/from the conductance/valence band, and (iii) the ionization voltage and lever arm from single-electron transport through the localized acceptor state. 23 The relevant parameters chosen for these calculations to match the change in band gap are the tip-sample separation 0.8 nm, the tip radius 8 nm, and the doping concentration 1 × 10 18 cm −3 .…”

Section: Resultsmentioning

confidence: 99%

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Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

et al. 2013

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Understanding the electronic properties of dopants near an interface is a critical challenge for nanoscale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath a hydrogen passivated silicon (100) surface. While dielectric mismatch between the vacuum and the silicon at the interface results in an image charge which enhances the binding energy of subsurface acceptors, quantum confinement is shown to reduce the binding energy. Using scanning tunneling spectroscopy we measure resonant transport through the localized states of individual acceptors. Thermal broadening of the conductance peaks provides a direct measure for the absolute energy scale. Our data unambiguously demonstrates that these two independent effects compete with the result that the ionization energy is less than 5 meV lower than the bulk value for acceptors less than a Bohr radius from the interface.

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Section: Resultsmentioning

confidence: 99%

“…4(a)]. Rather than trying to estimate the lever arm by solving the Poisson equation, 13,19,23,26 we fit the differential conductance peaks to a thermally broadened Lorentzian line shape 32 [shown in Fig. 4(b)]:…”

Section: Resultsmentioning

confidence: 99%

Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

et al. 2013

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“…At a monoatomic step on the (110) surface the atomic corrugation would be shifted by half a lattice constant. In addition, the sharp jagged edges of the dark objects point against charging effects as seen at donors or acceptors [32]. Accordingly, these highly localized dark objects must be attributed to In-poor (i.e., Al-rich) spots in the AlInAs layer.…”

Section: Resultsmentioning

confidence: 99%

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

et al. 2016

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Unsleber, S.; Deppisch, M.; Krammel, C.M.; Vo, Minh; Yerino, C.D.; Simmonds, P.G.; Lee, Minjoo Larry; Koenraad, P.M.; Schneider, C.; Höfling, S. Published in: Optics Express DOI:10.1364/OE.24.023198Published: 03/10/2016 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Unsleber, S., Deppisch, M., Krammel, C. M., Vo, M., Yerino, C. D., Simmonds, P. G., ... Höfling, S. (2016). Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express, 24(20), 23198-23206. DOI: 10.1364/OE.24.023198 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract: In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al 0.48 In 0.52 As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g (2) -values as low as g

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“…This requires the contact potential, which is maximal below the tip, be compensated. The voltage |V| for ionization therefore is largest for a donor below the tip apex 27 . The variation of the donor levels D 0 and D þ and the vibrational excitations with lateral position reflects the TIBB in the semiconductor.…”

Section: Resultsmentioning

confidence: 99%

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

Zheng

Berndt

2014

Nat Commun

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In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.

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Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

Cited by 28 publications

References 28 publications

Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

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