Single to two-phase matrix converter using GaN-based monolithic bidirectional switch for driving symmetrical two-phase motor

Kudoh, Yuji; Mizutani, K.; Otsuka, Nobuyuki; Ueda, Daisuke; Takahashi, Satoru; Inamori, M.; Yamagiwa, Hiroto; Morita, Tatsuo; Ueda, T.; Tanaka, Tsuyoshi; Morizane, Toshimitsu

doi:10.1109/ecce.2014.6953833

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…Furthermore, both implementations result in very robust solutions, as conduction in the third quadrant (SCRC or Self Commutated Reverse Capability) provides natural "freewheel paths" in case that both transistors do not commutate simultaneously. However, thanks to their lateral structure, GaN HEMTs provide additional integration capabilities since a monolithical integration of the BDS power stage is possible as it has already been presented in many publications [16]- [19]. In addition, GaN has an extra advantage compared with SiC as a result of the enhanced mobility of electrons, which translates into a device with a smaller size for a given Ron and breakdown voltage (BV).…”

Section: Bds Implementationmentioning

confidence: 99%

Analysis of solid state relay solutions based on different semiconductor technologies

Fernández

Perpiñà

Vellvehı́

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper provides an analysis on the design, implementation and operation of Bi-Directional Switches (BDS) based on power semiconductor devices intended to replace Electro Mechanical Relays (EMR) in home appliances. Static and dynamic characterizations of test vehicles developed using different power device semiconductor technologies (TRIAC, Super Junction (SJ) MOSFET, IGBT…) are presented. At this time, emerging Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) seem to be very suitable for the mentioned applications. Actually, GaN HEMTs based BDS has demonstrated to be the best solution to replace EMRs, with a high expectation to a significant cost reduction.

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Section: Bds Implementationmentioning

confidence: 99%

Analysis of solid state relay solutions based on different semiconductor technologies

Fernández

Perpiñà

Vellvehı́

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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“…The on-resistance for the buck rectifier approaches to the resistance for the boost rectifier. Moreover, the ultra-low loss bi-directional switch based on the GaN lateral transistor has been developed and the application effect for the matrix (ac-ac) converter has been reported [11]. The developed bi-directional switch consists of single GaN transistor and the on-resistance becomes much lower than the resistance of the switch which requires two transistors.…”

Section: Configuration Of Rectifiermentioning

confidence: 99%

Design Consideration for High Power Density GaN Buck-Rectifier in ISOP-IPOS Converter based dc Distribution System

Hayashi¹,

Matsumoto²

2015

JEPE

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GaN (gallium nitride) buck-rectifier has been proposed to realize high power density ISOP (input series and output parallel)-IPOS (input parallel and output series) converter-based dc distribution system. The ultra-low loss bi-directional switch can be developed by the GaN power device because of the low on-resistance, the high-speed switching behavior and its own device structure. The buck-rectifier using the GaN bi-directional switches has the potential to achieve higher power density than the commonly utilized boost-rectifier. Availability of the GaN-HEMT (high electron mobility transistor) for the buck rectifier has been verified taking the theoretical limit of the on-resistance and the switching loss energy into account. Design consideration for a high power density buck-rectifier has been also conducted and the application effect of the GaN bidirectional switches has been evaluated quantitatively. The ISOP-IPOS converter-based dc (direct current) distribution system takes full advantage of the buck-rectifier and the rectifier using GaN devices contributes to realizing higher power density dc distribution system.

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Analysis of bidirectional switch solutions based on different power devices

Fernández

Perpiñà

Vellvehı́

et al. 2017

2017 Spanish Conference on Electron Devices (CDE)

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Single to two-phase matrix converter using GaN-based monolithic bidirectional switch for driving symmetrical two-phase motor

Cited by 9 publications

References 12 publications

Analysis of solid state relay solutions based on different semiconductor technologies

Analysis of solid state relay solutions based on different semiconductor technologies

Design Consideration for High Power Density GaN Buck-Rectifier in ISOP-IPOS Converter based dc Distribution System

Analysis of bidirectional switch solutions based on different power devices

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