2012
DOI: 10.1016/j.diamond.2012.04.007
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Single-walled carbon nanotube synthesis on SiO2/Si substrates at very low pressures by the alcohol gas source method using a Pt catalyst

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Cited by 21 publications
(19 citation statements)
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“…The nominal thickness of Pt was fixed to be 0.2 nm, which was the optimal thickness to obtain the highest yield [4]. After deposition of catalysts in an ultra-high vacuum (UHV) chamber, the substrate temperature was increased to the growth temperature, 700ºC, under hydrogen gas flow at a pressure of 1×10 -3 Pa to prevent oxidation of catalysts.…”
Section: Methodsmentioning
confidence: 99%
“…The nominal thickness of Pt was fixed to be 0.2 nm, which was the optimal thickness to obtain the highest yield [4]. After deposition of catalysts in an ultra-high vacuum (UHV) chamber, the substrate temperature was increased to the growth temperature, 700ºC, under hydrogen gas flow at a pressure of 1×10 -3 Pa to prevent oxidation of catalysts.…”
Section: Methodsmentioning
confidence: 99%
“…The catalyst was first activated in air at 800 °C. This method produces well separated SWNTs with diameters of 0.5 to 2 nm [18][19][20][21]. Electron beam (EB) lithography was used to pattern source and drain contacts, which were deposited by EB evaporation of 30 nm of Pd or Ti.…”
Section: Methodsmentioning
confidence: 99%
“…The nominal thickness of Pt was fixed to be 0.2 nm, which was the optimal thickness to obtain the highest yield [4]. For comparison, we carried out SWCNT growth using Co catalysts, of which the nominal thickness was set to be the optimal value, 0.1 nm.…”
Section: Methodsmentioning
confidence: 99%