Single ZnO Microrod Ultraviolet Photodetector with High Photocurrent Gain

Dai, Jun; Xu, Chunxiang; Xu, Xiaoyong; Guo, Jiyuan; Li, Jitao; Zhu, Gangyi; Lin, Yi

doi:10.1021/am403609y

Cited by 108 publications

(54 citation statements)

References 33 publications

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“…Researchers have demonstrated that the photoresponse of ZnO photodetector can be improved by optical resonant cavity effect and multireflection processes in the micro/nano-structures. 9 The tin-doped CdS nanowires with hexagonal cross section have a typical whispering gallery mode microcavity structure. The light can be totally internal reflected on the inner wall and form a hexagonal closed optical loop.…”

Section: Resultsmentioning

confidence: 99%

“…4,8 Up to date, various 1D inorganic materials, such as ZnO, GaN, InAsSb, ZnS, Zn x Cd 1−x Se, ZnTe, CdS, In 2 Te 3 , InSe, have been used to fabrication photodetectors. 4,[9][10][11][12][13] It has been demonstrated that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including contact type of device, selected material, as well as the crystalline quality, dimension, surface adsorption and doping. Cadmium sulfide (CdS), as an important semiconductor with direct band gap of 2.47 eV (∼503 nm) at room temperature, has demonstrated interesting physical and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

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Broad spectral response photodetector based on individual tin-doped CdS nanowire

et al. 2014

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High purity and tin-doped 1D CdS micro/nano-structures were synthesized by a convenient thermal evaporation method. SEM, EDS, XRD and TEM were used to examine the morphology, composition, phase structure and crystallinity of as-prepared samples. Raman spectrum was used to confirm tin doped into CdS effectively. The effect of impurity on the photoresponse properties of photodetectors made from these as-prepared pure and tin-doped CdS micro/nano-structures under excitation of light with different wavelength was investigated. Various photoconductive parameters such as responsivity, external quantum efficiency, response time and stability were analyzed to evaluate the advantage of doped nanowires and the feasibility for photodetector application. Comparison with pure CdS nanobelt, the tin-doped CdS nanowires response to broader spectral range while keep the excellect photoconductive parameters. Both trapped state induced by tin impurity and optical whispering gallery mode microcavity effect in the doped CdS nanowires contribute to the broader spectral response. The micro-photoluminescence was used to confirm the whispering gallery mode effect and deep trapped state in the doped CdS nanowires.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Broad spectral response photodetector based on individual tin-doped CdS nanowire

et al. 2014

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“…Thermal Evaporation [41] Ag/ZnO microrod/Ag Schottky contacts (20 mm) t r ¼ 6.28 t d ¼ 0.8 λ ¼ 325, P ¼ 24 9 Â 10 5 1.5 Â 10 5 4 Â 10 4 (5 V) Thermal Evaporation [38] Al/ZnO NW networks on ITO/Al (400 mm)…”

Section: Discussionmentioning

confidence: 99%

“…We estimated the time constants of rise stage are t 1 ¼ 6.27 s and t 2 ¼ 37.1 s, and their relative weight factors are 85 and 15%, respectively, which give an average rise time constant of t r ¼ 11.02 s; the estimated time constants of the decay stage are t 1 ¼ 0.28 s and t 2 ¼ 6.85 s, with relative weight of 67 and 33%, respectively, producing an average decay time constant t d of 2.43 s. It was found that the rise process of NW array PD (1.38 s) is much faster than that of single NW PD (11.02 s), while the resetting process of ZnO NW array PD (4.05 s) is also comparable with that of single NW device (2.43 s). [6,9,11,14,16,19,20,22,25,27,[33][34][35][36][37][38][39][40][41][42] Compared to low temperature synthesized ZnO nanorods reported in reference, [35,36] ZnO NW arrays grown by CVD at high temperature have better crystal quality, which contributes to the high performance of our devices. Table 1 compares the photoresponse of different ZnO NW-based UV PDs as reported previously.…”

Section: Photoresponse Behavior Of Zno Nw Uv Pdsmentioning

confidence: 99%

“…Table 1 compares the photoresponse of different ZnO NW-based UV PDs as reported previously. [6,9,11,14,16,19,20,22,25,27,[33][34][35][36][37][38][39][40][41][42] Compared to low temperature synthesized ZnO nanorods reported in reference, [35,36] ZnO NW arrays grown by CVD at high temperature have better crystal quality, which contributes to the high performance of our devices.…”

Section: Photoresponse Behavior Of Zno Nw Uv Pdsmentioning

confidence: 99%

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Direct Catalyst‐Free Chemical Vapor Deposition of ZnO Nanowire Array UV Photodetectors with Enhanced Photoresponse Speed

Zhan

et al. 2017

Adv Eng Mater

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ZnO-based photodetectors (PDs) have long response times at magnitude of tens to hundreds of seconds, hampering their practical UV detection. The slow oxygen chemisorption/desorption process is the main cause of the slow response of UV PDs based on single ZnO nanowires (NWs). Here, the authors find the response speed of ZnO NW-based UV PDs could be improved by directly fabricating UV PDs on entangled ZnO NW array grown on SiO 2 through a catalyst-free chemical vapor deposition (CVD) process. Specifically, the interconnections in ZnO NW array creates NW-NW junction barriers, which dominate the inter-wire charge transport. The switching of UV illumination induces fast tuning of NW-NW junction barrier height, which contributes to the enhanced response speed of the ZnO NW array UV PDs.

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Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Liu

Shi

Wang

et al. 2021

Adv Materials Technologies

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Core–shell heterojunction structure is a feasible approach to optimize the optoelectronic performance of devices by combining the advantages of different materials. In this work, GaN/AlN core–shell heterojunction microwire‐based photodetector (PD) has been fabricated, and appropriate epitaxy growth of AlN can improve the performances of PDs. Compared with pure GaN microwire device, the enhanced responsivity, sensitivity, detectivity, and external quantum efficiency value of 4160 A W−1, 1.88 × 107%, 3.93 × 1012 Jones, and 4.07 × 106% are obtained with 5 nm thick AlN. Meanwhile, a rise/decay time of 25/16 ms is possessed. In addition, the responsivity and detectivity are increased with an acceptable decrease in sensitivity when the exciting light intensity decreases. The effective advances of PDs are benefited from the increased Schottky barrier height, the built‐in electric field that promotes the separation of photogenerated electron‐hole pairs, and direct heteroepitaxial growth high crystal quality GaN/AlN core/shell structure, which will effectively passivate the surface of GaN microwire by covering AlN. This study sheds some light on fabricating high‐performance microwire‐based PDs.

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Single ZnO Microrod Ultraviolet Photodetector with High Photocurrent Gain

Cited by 108 publications

References 33 publications

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Broad spectral response photodetector based on individual tin-doped CdS nanowire

Direct Catalyst‐Free Chemical Vapor Deposition of ZnO Nanowire Array UV Photodetectors with Enhanced Photoresponse Speed

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

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