Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare‐Earth‐Doped ZnO Varistor

Cai, Jingnan; Lin, Yuan‐Hua; Li, Ming; Chen, Nan; He, Jinliang; Yuan, Fangli

doi:10.1111/j.1551-2916.2006.01338.x

Cited by 56 publications

(39 citation statements)

References 16 publications

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“…The cause of voltage gradient increase of ZnO varistors by RE doping is also investigated by many scientists [29][30][31][32][33][34]. Generally, it is believed that the ionic radius of REs is greater than that of Zn 2+ ions.…”

Section: Re Doping Effect On Voltage Gradient Of Zno Varistorsmentioning

confidence: 99%

Progress on rare-earth doped ZnO-based varistor materials

et al. 2013

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Rare-earth (RE) doping can greatly enhance the voltage gradient of ZnO-based varistors, and their nonlinear coefficient, leakage current, energy absorption capability, through-current capability and residual voltage can also be improved to certain extent. In this review, the progress on RE-doped ZnO-based varistor materials in recent years was summarized. The mechanism of RE doping on the electrical performance of ZnO varistors was analyzed. The issues in exploring new ZnO-based varistor materials by RE doping were indicated, and the development trends in this area were proposed.

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Section: Re Doping Effect On Voltage Gradient Of Zno Varistorsmentioning

confidence: 99%

Progress on rare-earth doped ZnO-based varistor materials

et al. 2013

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“…The values of J at E = 0 at different temperatures, which were extrapolated from the linear regions of the Up to now, there have been different equivalent circuit models proposed for identifying the characteristics of the grains and grain boundaries of the ZnO based varistors [17][18][19][20]28]. The most common and accepted one is shown in the inserts in the upper-right corner in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…For the ZnO based varistors, a close interrelationship exists among the defects, dopants, processing conditions and electrical properties [17][18][19][20][21][22][23]. Gupta et al reviewed different types of natural defects and their energies in the ZnO-Bi 2 O 3 based varistors, and pointed out that the interstitial Zn i played a significant role [24].…”

Section: Introductionmentioning

confidence: 99%

The AC impedance and variable temperature dielectric spectroscopic analysis of MnO2 doped and un-doped ZnO–V2O5 ceramics

et al. 2011

J Mater Sci: Mater Electron

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The electrical and dielectric properties of MnO 2 doped and un-doped ZnO-V 2 O 5 ceramics were studied by ac impedance and variable temperature dielectric spectroscopy. The results show that V and Mn ions simultaneously segregated at the grain boundaries to form an intergranular phase, increasing the resistivity of the intervening layer and the Schottky barrier at the grain boundaries, and then improving the varistor performance. An obvious loss peak appeared in all the samples, which means an effective depletion layer has formed. As for the samples sintered at 1,000°C for 2 h, the activation energy of the characteristic relaxation process is about 0.339 eV for 99.5 mol% ZnO ? 0.5 mol% V 2 O 5 and 0.352 eV for 99.0 mol% ZnO ? 0.5 mol% V 2 O 5 ? 0.5 mol% MnO 2 , respectively, which means this relaxation process is associated with oxygen vacancy V O Á .

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“…Compared with the sample without Co, the samples doping with cobalt oxides had lower apparent dielectric constants. It was proposed that the decrease of e a was mainly ascribed to the increase of the depletion layer width [27] as shown in Table 4. It is Fig.…”

Section: Methodsmentioning

confidence: 99%

Low-temperature sintering and electrical properties of Co-doped ZnO varistors

Chu

et al. 2014

J Mater Sci: Mater Electron

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ZnO-Bi 2 O 3 -B 2 O 3 -based varistors doped with each kind of cobalt oxides were prepared by conventional ceramic processing. The effects of CoO, Co 2 O 3 and Co 3 O 4 on the microstructure and the electrical characteristics of varistor samples sintered at 880°C were investigated separately. Analysis of microstructure indicated the cobalt cations were distributed both in grain regions and grain boundary regions and no crystalline phases containing cobalt were detected in XRD patterns for the samples with various cobalt oxides. All these cobalt oxides could effectively enhance the varistor performance by effectively increasing the nonlinear coefficient and lowing the leakage current, while the breakdown voltage fields increased slightly. Capacitance-voltage characteristics showed the potential barriers of varistor samples increased with the addition of each cobalt oxide. It was found that the addition of same amount of cobalt cations in various cobalt oxides had a different effect on the varistor samples. Best electrical properties were obtained for the varistor sample containing Co 3 O 4 , in which the nonlinearity coefficient is 28.5, the leakage current density is 3.4 lA and the breakdown voltage field is as low as 260 V/mm.

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Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare‐Earth‐Doped ZnO Varistor

Cited by 56 publications

References 16 publications

Progress on rare-earth doped ZnO-based varistor materials

Progress on rare-earth doped ZnO-based varistor materials

The AC impedance and variable temperature dielectric spectroscopic analysis of MnO2 doped and un-doped ZnO–V2O5 ceramics

Low-temperature sintering and electrical properties of Co-doped ZnO varistors

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