SiO
                  2
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                PbTe
           quantum-dot multilayer production and characterization

Rodríguez, E.; Jiménez, E.; Padilha, Lázaro A.; Neves, Antonio Alvaro Ranha; Jacob, G. J.; César, Carlos L.; Barbosa, L. C.

doi:10.1063/1.1887823

Cited by 29 publications

(13 citation statements)

References 15 publications

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“…5 IV-VI QDs have been fabricated by molecular beam epitaxy and other synthesis methods. 2,[6][7][8] Recently, Heiss et al 9 demonstrated that PbTe QDs could be fabricated by annealing PbTe͑001͒ / CdTe͑001͒ single quantum well structures at different temperatures and observed room-temperature midinfrared photoluminescence with intensities significantly higher than those observed from their best PbTe bulk or quantum well samples. Transmission electron microscopy characterization showed that the PbTe/ CdTe QDs had a highly symmetric geometry of a small-rhombo-cubooctahedron with three interface classes ͕100͖, ͕110͖, and ͕111͖ around the periphery of the dots ͓see Fig.…”

Section: Introductionmentioning

confidence: 99%

Optical transitions inPbTe∕CdTequantum dots

et al. 2007

Phys. Rev. B

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Recently, intense room-temperature midinfrared luminescent emission has been observed in high-symmetry PbTe quantum dots ͑QDs͒ embedded in a ͑001͒-oriented CdTe single crystalline matrix ͓W. Heiss et al., Appl. Phys. Lett. 88, 192109 ͑2006͔͒. To interpret the optical transition in these newly realized QDs, we have developed a four-band k ៝ · p ៝ model that takes into account the anisotropic effects of the band structure and finite-confinement potential in the QDs. The high order term o͑k i 4 ͒ in the Hamiltonian is calculated using perturbation approximation methods. The simulation of the spontaneous emission of PbTe/ CdTe QDs shows that two types of quantum structures were formed by the thermal annealing of the PbTe/ CdTe quantum wells, as reported by Heiss et al., and the calculations are in good agreement with the experimental observations of the dot sizes and photoluminescence. The model can be extended to the description of interband optical transitions in other IV-VI QDs, such as PbSe/ PbTe and PbSe/ PbEuTe QDs that usually have a large size ͑with a typical lateral size of 50 nm and height of 20 nm͒ and small quantum confinement potential ͑Ͻ100 meV͒ and are oriented in different directions.

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Section: Introductionmentioning

confidence: 99%

Optical transitions inPbTe∕CdTequantum dots

et al. 2007

Phys. Rev. B

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“…We reported here characterization and electrochemical properties of an ultrathin layer of Pt (ULPt) prepared by the PLD method, and its application to detect hydrogen peroxide. The PLD method is widely used to deposit a functional thin film like a superconductive solid film [13], an electrolyte film for solid oxide fuel cell (SOFC) [14], and multilayers in an atomic layer with high quality [13,15,16]. Quality of the film is comparable to those grown by molecular beam epitaxy (MBE).…”

Section: International Journal Of Electrochemistrymentioning

confidence: 99%

Electrochemical Response of Platinum Ultrathin Layer Formed by Pulsed Laser Deposition

Ito

Kaneko

Kunimatsu

et al. 2011

International Journal of Electrochemistry

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Ultrathin layer of platinum (ULPt) was deposited on glassy carbon (GC) substrate by using pulsed laser deposition (PLD) method, and electrochemical properties of the ULPt were discussed. The deposition was simply performed at room temperature with short deposition time. Atomic force microscopy and scanning electron microscopy images showed the flat surface of the ULPt. X-ray photoelectron spectroscopy (XPS) characterized the ULPt in the Pt(0) state, and biding energy of ULPt was positively shifted. These results indicated that nanostructure of Pt thin layer was formed. The electrochemical activity of the prepared ULPt on GC substrate was superior to a bulk Pt electrode regarding the potential and the magnitude of current on oxidizing hydrogen peroxide. This fast and easily prepared low-cost electrode had the potential to replace a conventional bulk metal electrode.

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“…To conquer these problems, physical way of multilayer approach using layer by layer deposition process is preferred. Meantime, PbTe NCs prepared by multilayer approach using physical method such as molecular beam epitaxy [16] and thermal evaporation [17] are less studied compared to other Lead chalcogenides. Thermal evaporation is a simple, cost effective and versatile method to form complex nanocomposite structures with fine control over thickness through alternate layer by layer deposition.…”

Section: Introductionmentioning

confidence: 99%