SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS–O2–NH3–Ar gas mixtures

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

“…The shift in the peak of the Si-O signal was demonstrated as the reduction of the oxygen content (O/Si) in the deposited films according to the previous reports [32][33][34][35]. When the ammonia gas in the gas flow ratio reached 0.75, the intensity of the Si-O signal was markedly decreased and its peak apparently shifted to 1051 cm −1 with a satellite peak related to the signals overlapped by the C-H/C-C bonds at about 1101 cm −1 [29]. Such organic C-H/C-C bonds (~1105 cm −1 ) and the organosilicon (Si-CH 2 -Si) bond absorbed at approximately of 1037 cm −1 became the dominating signals of the FTIR spectrum for the film synthesized from the TMS-NH 3 gas mixture [16,20,29,36].…”

“…For the film synthesized from the TMS-O 2 gas mixture, the stretching and bending modes of the Si-O bonds could be determined at the peaks of 1066 and 817 cm −1 , respectively, while the signals related to the hydroxyl (O-H at around 2800-3700 cm −1 ) and silanol (Si-OH at 940 cm −1 ) were almost absent in the FTIR spectrum [27][28][29]. When the film was synthesized from the TMS-O 2 -NH 3 gas mixture at the gas flow ratios of 0.25 and 0.5, the Si-O bond was still the dominant signal over the FTIR spectra without the absorbance signal from the N-H bond at around 3200-3600 cm −1 [27,29]. However, as the introduced ammonia gas reached a gas flow ratio of 0.75, the FTIR spectrum of the resulting film exhibited an obvious reduction in the relative intensity of the Si-O bond with a satellite peak at about 1101 cm −1 .…”

“…Such organic C-H/C-C bonds (~1105 cm −1 ) and the organosilicon (Si-CH 2 -Si) bond absorbed at approximately of 1037 cm −1 became the dominating signals of the FTIR spectrum for the film synthesized from the TMS-NH 3 gas mixture [16,20,29,36]. In addition, the introduced ammonia gas in the glow discharge also resulted in the films exhibiting two weak signals at about 910 and 736 cm −1 which were assigned to the Si-N and Si-C bonds, respectively [13,20,29,37]. Figure 4a shows the atomic concentration of the films synthesized from various gas flow ratios measured by XPS.…”

Influence of Tetramethyldisiloxane‐Oxygen Mixtures on the Physical Properties of Microwave PECVD Coatings and Subsequent Post‐Plasma Reactions

“…Such precursors as hexamethyldisiloxane (HMDSO), octamethyltrisiloxane (OMTS), and tetramethyldisiloxane (TMDSO), amongst others, have been investigated for use in PECVD. [5][6][7][8][9][10][11] The addition of oxygen gas has often been found to enhance the properties of coatings and the effect of the oxygen concentration in the process gas mixture on coatings has been investigated by Fraccasi et al, [12] Lamendola et al, [13] Goujon et al, [14] and Bapin et al [15] amongst others. [16][17][18][19] In this study, it is…”

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

“…[1,2]. In the case of OLEDs, H 2 O and O 2 can oxidize metallic electrodes and reduce the electron injection in the OLED structure, thereby, drastically decrease their performance.…”