Site-dependent Eu3+ luminescence in GaN:Eu3+ epitaxial films studied by microscopic photoluminescence spectroscopy

First-principles study of electronic structure and magnetism of cubic Al1−xErxN using the LSDA+U approach

“…Furthermore, photoluminescence in the visible has been observed in RE-doped GaN [6][7][8][9][10][11][12] and RE-doped AlN [13][14][15][16][17][18][19], which present an excellent opportunity for applications to full-color flat-panel displays [20][21][22]. An interesting aspect of these ions is the occurrence of localized strongly correlated 4e electrons, of which the treatment presents a challenge to band-structure theory.…”