We
synthesized single crystals of marokite (CaMn2O4)-type orthorhombic manganese (II,III) oxide, γ-Mn3O4, in a multianvil apparatus at pressures of 10–24
GPa. The magnetic, electronic, and optical properties of the crystals
were investigated at ambient pressure. It was found that γ-Mn3O4 is a semiconductor with an indirect band gap E
g of 0.96 eV and two antiferromagnetic transitions
(T
N) at ∼200 and ∼55 K.
The phase stability of the γ-Mn3O4 crystals
was examined in the pressure range of 0–60 GPa using single-crystal
X-ray diffraction and Raman spectroscopy. A bulk modulus of γ-Mn3O4 was determined to be B
0 = 235.3(2) GPa with B′ = 2.6(6).
The γ-Mn3O4 phase persisted over the whole
pressure range studied and did not transform or decompose upon laser
heating of the sample to ∼3500 K at 60 GPa. This result seems
surprising, given the high-pressure structural diversity of iron oxides
with similar stoichiometries. With an increase in pressure, the degree
of distortion of MnO6 polyhedra decreased. Furthermore,
there are signs indicating a limited charge transfer between the Mn3+ ions in the octahedra and the Mn2+ ions in the
trigonal prisms. Our results demonstrate that the high-pressure behavior
of the structural, electronic, and chemical properties of manganese
oxides strongly differs from that of iron oxides with similar stoichiometries.