Size-controlled synthesis of nanocrystalline CdSe thin films by inert gas condensation

Sharma, Jeewan; Singh, Randhir; Kumar, Akshay; Singh, Tejbir; Agrawal, Piyush; Thakur, Anup

doi:10.1007/s13204-018-0683-2

Cited by 5 publications

(2 citation statements)

References 40 publications

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“…For the experimental thin film, the activation energies (Ea) are calculated from the slops of the lnσ vs 1,000/T plots whereas the mobility activation energies (Ema) are calculated by subtracting the photo activation energies from the dark activation energies (Table 1). Similar types of results has also been reported by other workers [32][33][34]. For the thin film (t=240 nm, m=1M), grown at room temperature, the calculated values of Ea have been found to be 1.47 eV for high temperature region (R-I) and 0.87 eV for low temperature region (R-II).…”

Section: Temperature Dependence Of Conductivitysupporting

confidence: 88%

“…From this figure it is observed that there exist 2 different slops in the plots, which indicates the existence of 2 distinct trap levels, E1 and E2, at the considered room temperature. The trap depths are not single valued and there is a quasi-continuous distribution of trap levels below the conduction band [21,34]. It may be noted that photocurrent in these thin films is found to obey a sub-linear relation with the intensity of illumination (Figure 5(a)) which may be explained on the basic of defect controlled photoconductivity mechanism.…”

Section: Growth and Decay Of Photocurrentmentioning

confidence: 96%

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Effect of Intensity and Wavelength of Illumination on the Photoelectronic Properties of Nanocrystalline CdSe Thin Films

Sarmh¹,

Borah²

2022

Trends Sci

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Photoelectronic properties of nanocrystalline CdSethin films prepared by chemical bath deposition (CBD) technique at room temperature are studied taking its molar concentration as a function. Structural analysis of the deposited thin films shows that change of molarity brings a variation in the crystalline sizes of the thin films. Such thin films show suitable photoelectronic properties for the construction of different optoelectronic devices. The photocurrents are observed to be significantly defect controlled in the visible range of wavelengths. The transport mechanism for the thin films is generally a doubly activated process and the photocurrent decay characteristics curves are found to exhibit 2 different decay times which actually correspond to 2 distinct trap levels. HIGHLIGHTS The photoelectronic properties of nanocrystalline CdSe thin films deposited by CBD method are studied From the XRD of the films diffraction peaks may be indexed to diffraction basically from the (111) plane of zincblende structure The optical band gap may be varied with the molarity of the solution used for deposition Photoelectronic properties are dependent of the intensity of different monochromatic illuminations Photocurrents for the films are basically controlled by the grain boundary defects Growth and decay of photocurrent are effectively governed by different kind of traps GRAPHICAL ABSTRACT

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Section: Temperature Dependence Of Conductivitysupporting

confidence: 88%

Section: Growth and Decay Of Photocurrentmentioning

confidence: 96%