Size dependent arsenic volatilization in ErAs nanoparticle powders

Abstract

The thermal stability of ErAs nanoparticles and bulk-like powders, synthesized by pulsed laser ablation and direct reaction, respectively, is investigated up to 700 °C in N2. Thermogravimetric analysis and XRD are used to monitor the decomposition temperatures and crystalline compositions of the synthesized powders, respectively. Degradation of unagglomerated nanoparticle powders is observed at 350 °C accompanied by the crystallization of amorphous Er2O3. Mass balance analysis suggests that the mass loss occurs as a result of arsenic volatilization rather than congruent sublimation of ErAs. Conversely, micron-sized agglomerated particles grown by direct reaction show little evidence for degradation under similar thermal processing conditions. This significant decrease in ErAs stability compared to agglomerated powders suggests a size dependence on the degradation characteristics of ErAs.

Fermi-Level Pinning in ErAs Nanoparticles Embedded in III–V Semiconductors

“…RE-Vs have been grown as bulk single crystals, thin films, and embedded nanoparticles within conventional III–V semiconductors. , Notably, epitaxial thin films of RE-Vs such as ErAs, TbAs, GdSb, and LuSb on substrates like GaAs, InGaAs, InAs, and GaSb have been successfully grown using the molecular beam epitaxy (MBE) method. − Coherent thin films with high structural quality were grown to a few monolayers by appropriately matching the rocksalt RE-V to the zinc blende III–V lattice parameters. Incorporating semimetallic RE-V nanoparticles in III–V semiconductor matrices has demonstrated the capability to modify their optical, electrical, and thermoelectric properties, with significant implications for device engineering . Remarkably, the growth of RE-V nanoparticles within III–V host matrices utilizing MBE has enabled unprecedented control over their positions, sizes, and density. − However, the underlying electronic structures of these nanocomposite materials have remained a subject of debate, with measurements of structural, thermal, electrical, optical, and magnetic properties providing only indirect evidence.…”