Size dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputtering

So, Yong Heng; Gentle, Angus; Huang, Shujuan; Conibeer, Gavin; Green, Martin A.

doi:10.1063/1.3561439

Cited by 28 publications

(19 citation statements)

References 29 publications

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“…27 However, several other groups reported PL peaks of nitride-embedded NCs in the range of 600-830 nm, i.e., in the same range as oxide-embedded Si NCs. 12,20,24,28 On the other hand, also PL peaks of down to 450 nm were reported. 5,29 Thus, obviously there seems to be no universally accepted PL peak position for nitride embedded Si NCs.…”

Section: Photoluminescence Of Si Ncs In Si 3 Nmentioning

confidence: 97%

“…9 Despite these expected advantages of silicon nitride films for the electrical transport, the dominating absorption centers as well as the origin of the luminescence from Si NC/Si 3 N 4 samples are still under debate. The origin of photoluminescence of silicon nitride films containing Si NCs was attributed by several groups 5,[10][11][12] to quantum confinement effects where the PL peak shifts to higher energies with decreasing Si NCs size. However, the results are not unambiguous, and a clear and strong PL peak shift with ranging size was not observed so far.…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Zelenina¹,

Dyakov²,

Hiller³

et al. 2013

Journal of Applied Physics

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Superlattices of Si3N4 and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiNx layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si3N4 matrix remains amorphous even after annealing at 1200 degrees C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO2 matrix. Also, a systematic peak shift was not found. The SiNx/Si3N4 superlattices showed photoluminescence peak positions in the range of 540-660nm (2.3-1.9 eV), thus quite similar to the bulk Si3N4 film having peak position at 577nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si3N4 are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si3N4 surrounding matrix luminescence

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Section: Photoluminescence Of Si Ncs In Si 3 Nmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Zelenina¹,

Dyakov²,

Hiller³

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…According to the results reported in other literatures, the peaks of P1, P2, and P3 can be attributed to different defect-related radiations [4]. But for P4 and P5, the peak wavelengths can be tuned by annealing temperatures, quantum confinement effects could be suggested as their origin [5]. In the as-deposited Si-rich α-Si 1-x -C x : H samples, there are plenty of SiH n (n=0,1,2,3), and Si 1-x C x :H radicals [6].…”

Section: Methodsmentioning

confidence: 72%

Multi-excitation of photoluminescence in hydrogenated amorphous Si-rich carbide films prepared by PECVD

Wen

Liao

Cao

2013

International Photonics and Optoelectronics Meetings (POEM)

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“…In a super-lattice structure (quantum dots arrays) the wave function can be diffuses into neighboring QDs. They couple with each other to broaden the discrete quantum levels to form finite-width mini-bands [14][15][16]. Mini-bands formation is a key parameter in QD solar cell.…”

Section: Introductionmentioning

confidence: 99%

Comparison the Effect of Size and Inter-dot Spaces in Different Matrix Embedded Silicon Quantum Dots for Photovoltaic Applications

Heidarzadeh

Rostami

Dolatyari

et al. 2015

2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014)

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The quantum dot solar cell concept is proposed as a scheme to optimize the efficiency of standard solar cells. The two most significant power loss mechanisms in single band gap solar cells are the inability to absorb photons with energy less than the band gap (transparency loss), and thermalisation of photon energy exceeding the band gap (thermalisation loss). There are several approaches for tackling these losses for instance tandem cell with increasing the number of band gaps or intermediate band solar cell by creating energy level inside the forbidden band of host materials. Quantum confined nanostructures of silicon with barriers of SiO 2 or SiC can potentially fill these criteria and allow designing of tandem cell or intermediate band solar cell with increased absorption given by direct band gap of such quantum confined systems. In this work, the comparison of solar cell is done based on tunneling probability between QDs which depends on dot size, type of matrices (SiO 2 or SiC) and thickness of barrier layer. The simulation results indicate that the chosen of SiC as dielectric matrix for silicon quantum dots could improve the tunneling rates, which provides an efficiency improvement in silicon, based nanostructure solar cells.

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Size dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputtering

Cited by 28 publications

References 29 publications

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

Multi-excitation of photoluminescence in hydrogenated amorphous Si-rich carbide films prepared by PECVD

Comparison the Effect of Size and Inter-dot Spaces in Different Matrix Embedded Silicon Quantum Dots for Photovoltaic Applications

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