Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching

Abstract

We investigated a size fluctuation of 50 nm periodic wire pattern of GaInAsP/InP structure with a typical wire width of around 30 nm, which was fabricated by an electron beam lithography followed by wet chemical etching. The size fluctuation of the ZEP-520 positive resist pattern was reduced from 2.7 nm to 1.4 nm by using a corrected dose profile taking the proximity effect into account, and that of the quantum-wire structure after wet etching was reduced from 3.8 nm to 2.9 nm.

Modification of the lattice thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons

“…The development of sophisticated pattering and self-assembly techniques for quasi one-dimensional (1D) semiconductor structures (quantum wires) [1,2] has stimulated a large body of new work in semiconductor physics over the last 10 years. Quantum wires with widths down to 100 Å and small size fluctuations have been fabricated by regular electron beam lithography and wet etching [3].…”