Size-related ferroelectric-domain-structure transition in a polycrystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">PbTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>thin film

Ren, Shibiao; Lu, Can‐Zhong; Liu, J. S.; Shen, Huimin; Wang, Y. N.

doi:10.1103/physrevb.54.r14337

Cited by 150 publications

(65 citation statements)

References 16 publications

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“…Each of these factors has been documented to have a significant effect on final ferroelectric film properties. [14][15][16] In the current research, we investigate the influence of residual stress on sol-gel derived Pb͑Zr 0.53 Ti 0.47 ͒O 3 thin films of varying thicknesses integrated onto Pt/ Ti/ SiO 2 ʈ Si substrates. Experimental conditions are carefully controlled to produce films of constant chemical composition, phase content, grain size, and crystallographic orientation to probe the isolated effects of stress and thickness on field-induced strains.…”

Section: Introductionmentioning

confidence: 99%

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

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Piezoelectric properties of three sol-gel derived Pb͑Zr 0.53 Ti 0.47 ͒O 3 thin film specimens of different thicknesses integrated onto Pt/ Ti/ SiO 2 ʈ Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.

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Section: Introductionmentioning

confidence: 99%

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

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“…Similar phenomena have been found in SBT and PT thin films. 8,9 Therefore, the growth of the film in one direction not coincident to c-axis preferred orientation will favor the platelike morphology, such as that grown on LSCO oxide electrode leading to a lower E c and a higher remnant polarization. The contribution of the La substitution to the large remanent polarization of the polycrystalline BLT films is not to enhance the intrinsic polarization but to bring out the polarization easily.…”

Section: Resultsmentioning

confidence: 99%

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Simões

Ramírez

Riccardi

et al. 2005

Journal of Applied Physics

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The ferroelectric properties and leakage current mechanisms of preferred oriented Bi 3.25 La 0.75 Ti 3 O 12 ͑BLT͒ thin films deposited on La 0.5 Sr 0.5 CoO 3 by the polymeric precursor method were investigated. These films showed excellent ferroelectric properties in terms of large remnant polarization ͑2P r ͒ of 47.6 C/cm 2 and ͑2E c ͒ of 55 kV/ cm, fatigue-free characteristics up to 10 10 switching cycles, and a current density of 0.7 A/cm 2 at 10 kV/ cm. X-ray diffraction and scanning electron microscope investigations indicate that the deposited films exhibit a dense, well-crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the platelike grains of the BLT films, which make the domain walls easier to be switched under external field.

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“…When pressure is applied to piezoelectric materials, it create a strain or deformation in the materials, due to the deflection of the lattice in a naturally piezoelectric quartz crystal [5]. The response repeatability of SBBT sensor is shown in figure 3.…”

Section: Piezoelectric Pressure Sensor Measurementmentioning

confidence: 99%

Materials of Nanocrystalline Sr1-xBaxBi4Ti4O15 for Piezoelectric Sensor

Abdul-Manaf

Salleh

Yahaya

2008

AMR

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Abstract. The nanocrystalline Strontium Barium Bismuth Titanate (SBBT) thin films with structure of Al/TiO 2 /SBBT/TiO 2 /RuO 2 /SiO 2 /Si were fabricated using sol-gel technique. The source materials are bismuth acetate Bi(CH 3 COO) 2 , barium acetate Bi(CH 3 COO) 2 , strontium acetate Sr(CH 3 COO) 2 and titanium butoxide (Ti(OC 4 H 9 ) 4 ). Different nanostructures of the films were prepared with un-annealed condition as well as after annealing at three different temperatures of 400, 500 and 600 0 C, in air for 2 minutes. The structure of SBBT thin films have been systematically studied by XRD, AFM, SEM and dielectric constant measurement. For the sensor device measurement, the SBBT thin film pressure sensors were tested by pneumatic loading method at pressure range between 0 to 450 kPa. It was found that the sensing properties of the films were affected by the crystalline nature of the films. It is shown that there is a linear relationship between the crystallization, grains size and dielectric properties with the sensing response of the film towards pressure.

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Size-related ferroelectric-domain-structure transition in a polycrystallinePbTiO3thin film

Cited by 150 publications

References 16 publications

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Ferroelectric properties and leakage current characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

Materials of Nanocrystalline Sr<sub>1-x</sub>Ba<sub>x</sub>Bi<sub>4</sub>Ti<sub>4</sub>O<sub>15</sub> for Piezoelectric Sensor

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