Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

Abstract

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3-bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing a gate that works on voltage controlled magnetic anisotropy. Here, the inhomogeneous magnetic anisotropy behaves as a tunable potential barrier/well that modulates the skyrmion trajectory in the structure for the successful implementation of the majority logic gate. In addition, several other effects such as skyrmion-skyrmion topological repulsion, skyrmion-edge repulsion, spin-orbit torque and skyrmion Hall effect have been shown to govern the logic functionalities. We have systematically presented the robust logic operations by varying the current density, magnetic anisotropy, voltage-controlled gate dimension and geometrical parameters of the logic device. The skyrmion Hall angle is monitored to understand the trajectory and stability of the skyrmion as a function of time in the logic device. The results demonstrate a novel method to achieve majority logic by using voltage controlled magnetic anisotropy which further opens up a new route for skyrmion-based low-power and high-speed computing devices.

Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation

“…demonstrated that VCMA can efficiently control the Néel vector in antiferromagnets with perpendicular anisotropy, enabling coherent excitation and manipulation of AFM order. The first-principles calculations further support these findings, with identified VCMA behavior in ultrathin FeRh/MgO bilayers and in materials like L1 0 -MnPd and MgO-capped MnPt AFM films. − Therefore, the precise manipulation of the electric field emerges as a promising avenue for realizing a reconfigurable logic gate within AFM materials, offering flexibility in performing different logic functions. , Additionally, an essential aspect of skyrmion-based logic gates lies in the interaction between skyrmions themselves in AFM thin films, particularly the sky–sky topological repulsion, highlighting their tunability and potential for logic operations. − Moreover, thoughtful geometric designs are one of the key mechanisms in reconfigurable skyrmion logic gates (RSL) as they grant the ability to exert control over the motion, interaction, and stability of skyrmions, all of which are critical elements for achieving the desired logic operations. , …”

“…48−52 Moreover, thoughtful geometric designs are one of the key mechanisms in reconfigurable skyrmion logic gates (RSL) as they grant the ability to exert control over the motion, interaction, and stability of skyrmions, all of which are critical elements for achieving the desired logic operations. 27,50 However, despite all of these advancements, there are persistent challenges related to reconfigurability and the implementation of logic gates, which ultimately impede the practicality of previous approaches. A notable challenge arises in skyrmion-based logic gates, which is the fabrication process of complex designs, particularly for NAND, XNOR, and NOR logic gates.…”

“…These logic gates provide scalability, ultrahigh storage density, and seamless integration with existing semiconductor technologies. Additionally, they exhibit remarkably high operation speeds, enabling fast and efficient data processing. − In comparison to conventional logic gates, skyrmion-based reconfigurable logic gates offer significant advantages, making them highly attractive for next-generation computing systems.…”

A magnetic skyrmion diode based on potential well inducting effect

“…gates [15][16][17] and racetrack memories [18][19][20]. Some experiments have confirmed that skyrmions can be produced and driven by spin polarized currents at room temperature [21,22], indicating the enormous potential of using skyrmions in the next generation of spin electronic devices.…”

Giant tunability of microwave responses for current-driven skyrmions in a tapered nanostructure with notches

“…The non-trivial topology of the skyrmion offers several advantages, such as low driving current density (∼10 6 A m −2 ), high stability and less interaction between neighboring skyrmions even if placed in close proximity, which allows them to stand out from other magnetic configurations such as domain walls. Therefore, magnetic skyrmions are promising for nextgeneration racetrack memories [8,9], logic devices [10][11][12][13], transistors [14] and nano-oscillators [15]. In addition, skyrmions are proposed to have potential in neuromorphic computing [16,17].…”