Slim Water Injection Nozzle for Silicon Wafer Wet Cleaning Bath

Okuyama, Shogo; Miyazaki, Kento; Ono, Nobutaka; Habuka, Hitoshi; Gotō, Akira

doi:10.4236/aces.2016.64035

Cited by 8 publications

(11 citation statements)

References 16 publications

(9 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The water was injected in the normal direction from the nozzle body. 19 Each nozzle supplied water at the flow rate of 8.5 L min −1 . The total water flow rate was 17 L min −1 .…”

Section: Experimental Procedures and Numerical Calculationmentioning

confidence: 99%

“…The changes in the water flow determined by the pinhole arrays were evaluated. Figure 1 shows the ordinary batch-type silicon wafer wet cleaning bath 19 which was designed for cleaning 300-mm diameter silicon wafers having a significant amount of mud-like waste remaining after the surface grinding. Figures 1a and 1b are the front view and the right side view, respectively.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

Matsuo

Miyazaki

Habuka

et al. 2018

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Water motions influenced by an outlet of a batch-type 300-mm diameter silicon wafer wet cleaning bath were experimentally and numerically studied in order to quickly remove the contaminants from the bath. The outlet consisting of a pinhole arrays (PA) near the top edge of the bath side wall was designed and evaluated along with an ordinary overflow (OF) outlet. The experiment showed that the amount of a blue-colored ink, used as a tracer, in the bath having both the OF-and the PA-outlets decreased faster than that in the bath having only the OF-outlet. Simultaneously, the amount of the blue-colored ink that returned to the bath bottom was reduced by using both the PA-outlet and the OF-outlet. The numerical calculations also showed that particles in the bath quickly went out through the PA-outlet. An advanced semiconductor material surface should be maintained clean for the electronic device fabrication.1,2 The batch-type wet cleaning method, using ultrapure water and chemical reagents in a bath, has been very popular for cleaning the surface of small and large diameter wafers. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The water flow in the wet cleaning bath has been continuously studied [16][17][18][19] in order to improve the productivity of the cleaning process. While the contaminants, such as small particles, were detached and transported away from the wafer surface, they frequently returned to the wafers following the water recirculation. Thus, the water flow in the bath should be further studied in detail.The water recirculation is considered to be formed by an asymmetric water injection and the insufficient cross section of the outlet. 19,20 In our previous study, 19 the water injection nozzle consisting of dual tubes was designed taking into account the pressure distribution in the nozzle for injecting the water in the normal direction with the symmetric water velocity distribution. While the efficiency of contamination removal from wafers is dominated by the direct water injection to the wafers from the water nozzles, the recontamination is influenced by the recirculation which may be caused by the outlet design. The water outlet design should be studied, next.The wet cleaning bath for the semiconductor materials process has preferred the overflow outlet in order to effectively remove many particles floating on the water surface. The overflow outlet is equivalent to the outlet having a significantly thin cross section along the top edge of the four side walls. In order to remove the contaminants through the overflow outlet, a large and fast stream is necessary near and toward the top edge of the bath side wall. Consequently, such a fast stream requires large and fast recirculations which simultaneously and unfortunately take some contaminants back to the wafers. Thus, a new water outlet design is expected for governing the entire water flow in the bath.In this study, the water outlet of the wafer wet cleaning bath was studied both experimentally and numerically from the viewpoint of expan...

show abstract

“…The water was injected in the normal direction from the nozzle body. 19 Each nozzle supplied water at the flow rate of 8.5 L min −1 . The total water flow rate was 17 L min −1 .…”

Section: Experimental Procedures and Numerical Calculationmentioning

confidence: 99%

mentioning

confidence: 99%

Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

Matsuo

Miyazaki

Habuka

et al. 2018

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…LPD generated by process and metrology equipment during handling [17,18] are inevitable. Consequently, the semiconductor process technology aims to either remove the handling-induced LPDs in the subsequent manufacturing process [19,20], or to ensure the contact points of equipment handling remain at the bevel region of a wafer (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

Prediction of wafer handling-induced point defects in 300 mm silicon wafer manufacturing from edge geometric data

Hu¹

2023

Preprint

View full text Add to dashboard Cite

<p>Abstract- For the miniaturization of the structures of semiconductor device fabrication, high uniformity of side-flatness and edge roll-off of 300 mm wafers are required. In this study, the formation of light point defects (LPDs) on silicon (Si) wafer surface due to an edge gripper handling system was investigated. The relationships between the generation of LPDs with respect to flatness, edge profile, and edge roll-off of Si wafers were analyzed. It was found that the variation of traditionfacet parameters and near-edge geometry metric, such as edge site frontsurface-referenced least squares/range (ESFQR), have no impact on the formation of surface LPDs. By contrast, the performance of Z-height double derivative (ZDD), allowed an accurate prediction of formation of surface LPDs. Additionly, for a 300mm silicon wafer, the surface LPDs occurred with frontside ZDD obtained at a radius of 149.2 mm, ranging above -954 nm/mm2 . The surface was LPDs free when ZDD was below -1235 nm/mm2 . Surface LPD formation occurred randomly and was not predictable when ZDD ranged from -954 nm/mm2 to -1235 nm/mm2 . The result indicates that the LPDs caused by wafer handling is proportional to the performance of ZDD at the edge roll-off area of silicon wafer, this is consistent with the requirement of edge roll-off considering wafer geometry.</p>

show abstract

“…In microelectromechanical system manufacturing and the fabrication of semiconductor electronic devices, semiconductor materials are generally processed inline or in batches, during mechanical, chemical, and thermal process steps. , Studies on single wafer etching methods focus on surface reactions, fluid flow, , temperature, and swinging nozzles . Wet-cleaning batch processes, especially for semiconductor silicon materials or silicon solar cells, belong to the most popular techniques and have considerable influence on the wafer quality . Several publications have investigated batch processes, describing mass transfer and kinetic effects, particle removability, and bubble and water motion in carrierless wet stations. , In the photovoltaic industry, wet chemical baths are used for cleaning, surface structuring, or intended etch back.…”

Section: Introductionmentioning

confidence: 99%

“…3,4 Studies on single wafer etching methods focus on surface reactions, 5 fluid flow, 6,7 temperature, and swinging nozzles. 8 Wet-cleaning batch processes, especially for semiconductor silicon materials or silicon solar cells, belong to the most popular techniques 9 and have considerable influence on the wafer quality. 10 Several publications have investigated batch processes, describing mass transfer and kinetic effects, 11 particle removability, 12 and bubble 13 and water motion in carrierless wet stations.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

Mohr

Dannenberg

Moldovan

et al. 2020

Ind. Eng. Chem. Res.

View full text Add to dashboard Cite

In microelectromechanical system manufacturing and especially in the photovoltaic industry, wet-chemical baths are used for surface structuring, conditioning, and cleaning. Ozonebased wet-chemical cleaning processes show, in addition to the cleaning of the silicon wafers, the ancillary effect of intended material etch back. Previous studies observed inhomogeneities over the wafer surface occurring during the ozone-based wet chemical process. Since a detailed observation during the process in the basin is not possible, simulations are carried out to understand what causes these inhomogeneities. Therefore, an existing microscopic two-dimensional (2D) model for reaction modelling is extended stepwise from a length of several microns to the full length of 157 mm of an industrial solar cell. Subsequently, the 2D model is transferred to a three-dimensional (3D) model. In addition, an initial water layer, originating from the previous rinsing step, and the movement of the handling system were taken into account for modeling. This approach allows the estimation of the etching process over an entire wafer surface for the first time and enables better understanding of the reasons for the inhomogeneities. The water layer in connection with the fast movement of the handling system and the masking, originating from carrier rods, leads to stripes on the wafer surface, shown by differences in reflection. As the water layer is not removed homogeneously, the occurring chemical reaction in the masked areas is delayed and results in an uneven etching of the wafer surface. The removal over the entire wafer surface in the simulation (8.51 ± 0.37 nm) is in accordance with the experimental data (9.02 ± 1.10 nm). This presented model can serve as a base for future work to estimate the effects of parameter changes, e.g., plant design or the composition of the etching solution on the homogeneity of the wet chemical cleaning and etch back process, thus enabling a cost efficient process optimization.

show abstract

Slim Water Injection Nozzle for Silicon Wafer Wet Cleaning Bath

Cited by 8 publications

References 16 publications

Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

Prediction of wafer handling-induced point defects in 300 mm silicon wafer manufacturing from edge geometric data

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

Contact Info

Product

Resources

About