Slow and swift heavy ions irradiation of zirconium nitride (ZrN) and the migration behaviour of implanted Eu

Mokgadi, T.; Mlambo, Mbuso; Skuratov, V.A.; Motloung, S.V.; Hlatshwayo, Thulani Thokozani

doi:10.1016/j.nimb.2019.09.031

Cited by 10 publications

(15 citation statements)

References 29 publications

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“…have concluded to a weak damage induced by the 167‐MeV Xe ions, owing to the low energy loss by nuclear collisions of Xe ions with respect to 200‐keV Eu ion implantation up to a fluence of 1 × 10 16 cm −2 . [ 69 ] This is clearly a variance with the present results since the saturation of Raman band growth occurs for a much lower fluence, which cannot be related to displacement damage. In the latter case, a linear increase versus fluence would have been expected in this range of low fluence.…”

Section: Discussioncontrasting

confidence: 56%

“…Raman spectra exhibit broad bands that can be fitted by Gaussian profiles which can be assigned to acoustic TA mode at 165 cm −1 and LA mode at 225 cm −1 , and optical TO modes at 455 cm −1 and LO modes at 510 cm −1 , [ 66–69 ] with a TO‐LA phonon gap of ~230 cm −1 between them (Figure 5). This is in agreement with the phonon DOS deduced from neutron inelastic scattering.…”

Section: Discussionmentioning

confidence: 99%

“…[ 66 ] The intermediate bands at 335 and 402 cm −1 are assigned to 2TA and (TA + LA) overtones, respectively. [ 66–69 ] Two more bands are recorded at 650 and 710 cm −1 , which may be assigned to (TO + LA) or (LO + LA) combination modes, [ 67 ] respectively. Several second‐order (two‐phonon) modes were also recorded above 900 cm −1 , that is, at ~1000 (2LO), [ 66,67 ] 1315 (2[TO + LA]), and 1455 cm −1 (2(LO + LA)) (not shown).…”

Section: Discussionmentioning

confidence: 99%

“…The growth of all bands is associated to vacancy formation in both sublattices. [ 69 ] Despite the few data points, the integrated peak intensities (I) of the TA, LA, and (TO + LO) bands increase with the 100‐MeV Xe ion fluence ( φ ) according to a saturation law for 1 order‐of‐magnitude increase of fluence (Figure 5, inset):

I goodbreak= I_{0} goodbreak+ ((), I_{\infty} goodbreak- I_{0}) ((), 1 goodbreak- e^{- σφ})

where I 0 is the virgin sample intensity, I ∞ is the asymptotic value, and σ is a damage cross section. Least square fits with equation yield similar σ values of 1.77 × 10 −12 cm 2 for the (TO + LO) band, 1.44 × 10 −12 cm 2 for the LA band, and 8.81 × 10 −13 cm 2 for the TA band.…”

Section: Discussionmentioning

confidence: 99%

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Raman spectroscopy study of damage in swift heavy ion‐irradiated ceramics

Costantini

Gutierrez

Lelong

et al. 2022

J Raman Spectroscopy

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Raman scattering is applied to probe the radiation damage in swift heavy ionirradiated ceramics, namely zirconium nitride (ZrN), ceria (CeO 2 ), and yttriastabilized zirconia (ZrO 2 : Y, or YSZ) for about the same high electronic stopping power of heavy ions. Raman spectra show that these ceramics are radiationresistant materials that are not amorphized by such irradiations even for large ion track overlap at high fluences. However, for ZrN, the increase of the TA/LA and TO/LO band intensities versus fluence is evidenced after 100-MeV Xe ion irradiation up to a saturation for the fluence of 3 Â 10 12 cm À2 . The band growths are ascribed to the increase of the concentration of Zr and N vacancies induced by electronic excitations inside tracks. However, the diffuse reflectance spectra do not exhibit any clear modifications of the electronic structure. For ceria, the decrease and broadening of the main F 2g peak of the fluorite-like structure and the growth of a broad defect band assigned to oxygen vacancy formation is observed versus fluence up to 10 14 cm À2 for 200-MeV Xe ion irradiation. For YSZ, Raman spectra mainly give evidence of the intrinsic lattice disorder due to the native oxygen vacancies even up to high fluences of about 3 Â 10 13 cm À2 for 200-MeV I and 200-MeV Au ion irradiation. Results are discussed on the basis of the interplay between the native structural disorder and the radiation-induced disorder by electronic excitations in these three materials.

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Section: Discussioncontrasting

confidence: 56%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

I goodbreak= I_{0} goodbreak+ ((), I_{\infty} goodbreak- I_{0}) ((), 1 goodbreak- e^{- σφ})

Section: Discussionmentioning

confidence: 99%

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Raman spectroscopy study of damage in swift heavy ion‐irradiated ceramics

Costantini

Gutierrez

Lelong

et al. 2022

J Raman Spectroscopy

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“…Interestingly, there are one peak in the region 300-410 cm -1 between the acoustic and optic modes that tends to increase in intensity with the increase of the temperature of pyrolysis. It represents a low-frequency second-order acoustic mode (2A) and it is an indication of ZrN with less stoichiometric defects [51]. It should be mentioned that the Raman peak at 660 cm -1attributed to Si3N4 [52] and present in all spectra of the samples derived from PVMSZ, and in PMZrSZ2.5_15 and PMZrSZ2.5_16 samples -indicated that the Si3N4 crystallization occurred in such samples as observed in the XRD patterns.…”

Section: High-temperature Phase and Microstructure Evolutionmentioning

confidence: 84%