Slow electron scattering from one-dimensional crystal models

Gerstner, J.; Cutler, P.H.

doi:10.1016/0039-6028(68)90173-8

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1973

1975

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Cited by 11 publications

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Interface States in a Linear Model of Heterojunctions

Kandilarov

Detcheva²,

Petrova

1975

Physica Status Solidi (b)

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The necessary and sufficient conditions for the existence of interface states in a heterojunction between a one-atomic and a two-atomic crystal are derived on the basis of a linear model using the scattering theoretical method of Saxon and Hutner. A discussion of the general features of the above conditions and their interpretation is given and particular cases are visualized applying numerical analysis.Die Existenzbedingungen fur diskrete Interface-Niveaus, die an der Grenze zwischen einem einatomaren und einem zweiatomaren Kristall lokalisiert sind, werden mit Hilfe der Saxon-Hutner-Methode der 8-und R-Matrizen abgeleitet. Ein lineares Model1 mit 8-Potentialen ist der Diskussion solcher diskreten Energieniveaus zugrunde gelegt, und es wird deren Abhangigkeit von bestimmten Kristallparametern abgeleitet und numerisch berechnet.

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