Slow pH response effects of silicon nitride ISFET sensors

Woias, Peter; Meixner, Leonhard; Fröstl, P.

doi:10.1016/s0925-4005(98)00032-x

Cited by 47 publications

(42 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The usual phenomena are fluctuation with time and fluctuation with temperature. The first phenomenon is a result of the drift mechanism [5], as well as slow pH response [6]- [8], which poses challenges in maintaining the long-term stability of standard ISFET devices. The second phenomenon is a result of the pH dependent temperature coefficient [9], [11]- [13] and nonlinear temperature dependent mobility in MOS part of ISFET [17], [24], which increase the difficulty of thermal compensation.…”

Section: Introductionmentioning

confidence: 99%

An Intelligent ISFET Sensory System With Temperature and Drift Compensation for Long-Term Monitoring

Chen

Chan

2008

IEEE Sensors J.

View full text Add to dashboard Cite

This paper presents a new intelligent ISFET sensory system dedicated to a precision pH sensory function, as well as a long-term monitoring capability without being jeopardized by temperature and drift fluctuations in the water-quality monitoring environment. It includes the novel compensation technique for counteracting a simultaneous change of temperature and drift, the design of the sensory system incorporating hardware and software co-design for enhancing the performance stability of a standard ISFET device and a new programmable current source with reduced dynamic current error for a dedicated temperature compensation process. The proposed ISFET sensory system, with about a 0.01 pH resolution in system design at a 3.3 V supply, has been validated by the experiments, exhibiting a maximum accuracy error of 0.02 pH at 23 C and 0.05 pH at 40 C with dual compensation. The compensation results show a maximum time drift of 0.003 pH/hour (0.166 mV/hour) at 23 C and an average temperature drift of 0.00049 pH hour C (0.0245 mV hour C) for a reference temperature increase from 23 C to 40 C, with the value of the pH solution ranging from 4 to 9 in six-hour measurements. These measured results outperform those of the reported drift reduction techniques, suggesting that the ISFET sensory system using novel compensation can provide significant immunity against temperature change, time drift, and temperature drift, which are favorable towards robust measurements in environmental monitoring applications.Index Terms-Intelligent sensor, ISFET drift, ISFET interface circuit, ISFET temperature compensation, long-term monitoring, microcontroller sensor system, precision current mirror, water quality monitoring.

show abstract

Section: Introductionmentioning

confidence: 99%

An Intelligent ISFET Sensory System With Temperature and Drift Compensation for Long-Term Monitoring

Chen

Chan

2008

IEEE Sensors J.

View full text Add to dashboard Cite

show abstract

“…Analytical applications of EIS sensors with silicon nitride films are hindered by a slow pH response [78,79,80]. According to refs.…”

Section: Silicon Nitride Filmsmentioning

confidence: 99%

“…At the present time, tantalum pentoxide is the best pHsensitive gate material of the EIS chemical sensors [81], combining practically ideal pH sensitivity with a minimal output voltage drift [80]. For these applications, thin Ta 2 O 5 films are commonly deposited on the surface of oxidized silicon by a variety of methods including chemical vapour deposition [24,82,83], radio-frequency sputtering [84], thermal oxidation of Ta [36,37,38] and pulsed laser deposition [3,39].…”

Section: Tantalum Pentoxide Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Vlasov

Tarantov

Bobrov

2003

Analytical and Bioanalytical Chemistry

View full text Add to dashboard Cite

Recent trends in research and development of electrolyte-insulator-semiconductor (EIS) field-effect chemical sensors (ion-selective field-effect transistors, light-addressable potentiometric sensors, capacitive EIS-sensors) with inorganic gate insulators (oxide, nitride and chalcogenide films) are reviewed. Physical properties of EIS systems and basic mechanisms of their chemical sensitivity are examined. Analytical characteristics and sensing mechanisms of EIS pH sensors with oxide and nitride films, as well as metal ions sensors with chalcogenide films, are critically discussed. Prospects of future research on EIS field-effect biosensors are briefly outlined.

show abstract

“…Furthermore, ruthenium oxide (RuO 2 ), platinum oxide (PtO 2 ), iridium oxide (IrO 2 ) and tin oxide (SnO 2 ) were investigated for pH electrode, based on the metal oxide electrode [1,3,4]. However, literatures [11][12][13][14][15][16] indicated that two mechanisms limited the accuracy with the pH sensor. These were hysteresis and drift, which leaded to unstable response of the pH sensor.…”

Section: Introductionmentioning

confidence: 99%

Study on the sensing characteristics and hysteresis effect of the tin oxide pH electrode

Tsai

Chou

Sun

et al. 2005

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

Slow pH response effects of silicon nitride ISFET sensors

Cited by 47 publications

References 5 publications

An Intelligent ISFET Sensory System With Temperature and Drift Compensation for Long-Term Monitoring

An Intelligent ISFET Sensory System With Temperature and Drift Compensation for Long-Term Monitoring

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors?a critical review

Study on the sensing characteristics and hysteresis effect of the tin oxide pH electrode

Contact Info

Product

Resources

About