Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings

Wang, Chengqing C.; Fu, Wei‐En; Li, Bin; Huang, Huai; Soles, Christopher L.; Lin, Eric K.; Wu, Wen‐Li; Ho, Paul S.; Cresswell, Michael W.

doi:10.1016/j.tsf.2009.03.040

Cited by 14 publications

(10 citation statements)

References 12 publications

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“…In the past decade, CDSAXS has been developed as a powerful tool for the characterization of periodic nano-structured surfaces. One major advantage of all transmission SAXS experiments lies in the fact that a theoretical model with the first Born approximation (BA) is suitable for a surface shape reconstruction, as demonstrated by several groups (Hu et al, 2004;Wang et al, 2009;Sunday et al, 2015Sunday et al, , 2016Lu et al, 2013). The incoming wave scatters only once at the target before forming the scattered wave.…”

Section: Computational Diffraction Intensitiesmentioning

confidence: 99%

Reconstructing detailed line profiles of lamellar gratings from GISAXS patterns with a Maxwell solver

et al. 2017

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Laterally periodic nanostructures were investigated with grazing incidence small angle X-ray scattering (GISAXS) by using the diffraction patterns to reconstruct the surface shape. To model visible light scattering, rigorous calculations of the near and far field by numerically solving Maxwell's equations with a finite-element method are well established. The application of this technique to X-rays is still challenging, due to the discrepancy between incident wavelength and finite-element size. This drawback vanishes for GISAXS due to the small angles of incidence, the conical scattering geometry and the periodicity of the surface structures, which allows a rigorous computation of the diffraction efficiencies with sufficient numerical precision. To develop dimensional metrology tools based on GISAXS, lamellar gratings with line widths down to 55 nm were produced by state-ofthe-art e-beam lithography and then etched into silicon. The high surface sensitivity of GISAXS in conjunction with a Maxwell solver allows a detailed reconstruction of the grating line shape also for thick, non-homogeneous substrates. The reconstructed geometrical line shape models are statistically validated by applying a Markov chain Monte Carlo (MCMC) sampling technique which reveals that GISAXS is able to reconstruct critical parameters like the widths of the lines with sub-nm uncertainty.

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Section: Computational Diffraction Intensitiesmentioning

confidence: 99%

Reconstructing detailed line profiles of lamellar gratings from GISAXS patterns with a Maxwell solver

et al. 2017

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“…Current methods for characterizing defects in thin film BCPs include a combination of optical defect detection with scanning electron microscopy (SEM) 23 , scatterometry or optical critical dimension (OCD) metrology 24 , and X-ray scattering metrology using critical dimension small angle X-ray scattering (CDSAXS) 25–30 with resonant soft X-rays 31–35 . SEM is most useful for detecting defects related to pattern registration, where deviations from the patterned template are visible at the surface.…”

Section: Introductionmentioning

confidence: 99%

Advancing x-ray scattering metrology using inverse genetic algorithms

Hannon

Sunday

Kline

2016

J. Micro/Nanolith. MEMS MOEMS

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We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings measured using critical dimension small angle X-ray scattering. Both a covariance matrix adaptation evolutionary strategy and differential evolution algorithm are implemented and compared using various objective functions. The algorithms and objective functions are used to minimize differences between diffraction simulations and measured diffraction data. These simulations are parameterized with an electron density model known to roughly correspond to the real space structure of our nanogratings. The study shows that for X-ray scattering data, the covariance matrix adaptation coupled with a mean-absolute error log objective function is the most efficient combination of algorithm and goodness of fit criterion for finding structures with little foreknowledge about the underlying fine scale structure features of the nanograting.

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“…GI‐SAXS methods look appealing for characterizing the microstructure of pores and implanted defects,87 but current acquisition times are too long for deploying GI‐SAXS in manufacturing lines. Nevertheless, GI‐SAXS and transmission SAXS are quite relevant for determining feature sidewall profiles, heights, and distribution of these parameters at the nanometer scale,88 and should replace optical scatterometry techniques for 22 nm and beyond CMOS technology nodes.…”

Section: Discussionmentioning

confidence: 99%

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X‐Ray Techniques Using Lab‐Based and Synchrotron Radiation Sources

et al. 2011

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Future nanoelectronics manufacturing at extraordinary length scales, new device structures, and advanced materials will provide challenges to process development and engineering but also to process control and physical failure analysis. Advanced X‐ray techniques, using lab systems and synchrotron radiation sources, will play a key role for the characterization of thin films, nanostructures, surfaces, and interfaces. The development of advanced X‐ray techniques and tools will reduce risk and time for the introduction of new technologies. Eventually, time‐to‐market for new products will be reduced by the timely implementation of the best techniques for process development and process control. The development and use of advanced methods at synchrotron radiation sources will be increasingly important, particularly for research and development in the field of advanced processes and new materials but also for the development of new X‐ray components and procedures. The application of advanced X‐ray techniques, in‐line, in out‐of‐fab analytical labs and at synchrotron radiation sources, for research, development, and manufacturing in the nanoelectronics industry is reviewed. The focus of this paper is on the study of nanoscale device and on‐chip interconnect materials, and materials for 3D IC integration as well.

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Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings

Cited by 14 publications

References 12 publications

Reconstructing detailed line profiles of lamellar gratings from GISAXS patterns with a Maxwell solver

Reconstructing detailed line profiles of lamellar gratings from GISAXS patterns with a Maxwell solver

Advancing x-ray scattering metrology using inverse genetic algorithms

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X‐Ray Techniques Using Lab‐Based and Synchrotron Radiation Sources

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