Small-Diameter Silicon Nanowire Surfaces

D., D. D.; Lee, C. S.; Au, Frederick C. K.; Song, Tong; Lee, S. T.

doi:10.1126/science.1080313

Cited by 1,141 publications

(823 citation statements)

References 21 publications

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“…as fluorine (F) [25,31,34,35]. The effective n-type behavior is caused by a gating with the surface charge, although the details of the bending and charge transfer mechanism are not well understood [31,36].…”

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confidence: 99%

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Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

et al. 2010

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Abstract:Integrated freestanding single-crystal silicon nanowires with typical dimension of 100 nm × 100 nm × 5 μm are fabricated by conventional 1:1 optical lithography and wet chemical silicon etching. The fabrication procedure can lead to wafer-scale integration of silicon nanowires in arrays. The measured electrical transport characteristics of the silicon nanowires covered with/without SiO2 support a model of Fermi level pinning near the conduction band. The I-V curves of the nanowires reveal a current carrier polarity reversal depending on Si-SiO2 and Si-H bonds on the nanowire surfaces.

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confidence: 99%

“…Our I-V characteristics clearly show asymmetry that indicates that the Cr/Si contacts are Schottky contacts and the barrier at each contact is slightly different. Because substantial quantum size effects require a SiNW effective diameter of less than ∼5nm [24,25], the M-S-M junction model is suitable for extracting the semiconductor parameters of our SiNWs.…”

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confidence: 99%

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

et al. 2010

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“…[3][4][5][6][7][8][9] Once a silicon p-n diode is reduced to a single NW, its opto-electronic characteristics can signicantly change due to an enhanced contribution of the electrical surface response, a strong current connement within the structure and resonant interaction with light. [10][11][12][13] These phenomena require in-depth understanding in order to successfully replace parts of today's technologies by advantageous NW building blocks. To date, opto-electronic parameter retrieval of single SiNW diodes is usually performed on individual model structures, where the SiNWs are removed from a substrate (thereby they are taken out of an ensemble of NWs) and electrically contacted using elaborate clean room methods such as e.g.…”

Section: Introductionmentioning

confidence: 99%

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate

et al. 2014

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Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

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“…In addition, the optical band gap of SiNWs increases with the decrease of the wire diameter; thus, they are potentially more useful in optoelectronics applications than bulk Si [6].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of silicon nanowires catalyzed by aluminum

Al-Taay

Mahdi

Parlevliet

et al. 2013

Physica E: Low-dimensional Systems and Nanostructures

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. AbstractSilicon nanowires (SiNWs) were grown on indium tin oxide coated glass substrates by a pulsed plasma-enhanced chemical vapor deposition (PPECVD) method using aluminum as a catalyst. The thin films of the catalyst, with thicknesses ranging from 10 nm to 100 nm, were deposited on the substrates by thermal evaporation. The effect of the thickness of the thin film catalyst on the morphology of the silicon nanowires was investigated. The surface morphology study of the prepared wires showed that the modal wire diameter increased as the catalyst film thickness increased. The X-ray diffraction patterns of the prepared silicon nanowires had no silicon peaks, indicating that the wires had low crystallinity. The photoluminescence spectra of the SiNWs showed that all samples had more than one emission band. The emission band location and shape were found to be dependent on catalyst thickness. The Raman spectra of the prepared nanowires showed that the first order transverse band shifted toward lower frequencies compared with the c-Si band location.

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Small-Diameter Silicon Nanowire Surfaces

Cited by 1,141 publications

References 21 publications

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate

Preparation and characterization of silicon nanowires catalyzed by aluminum

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