Small-Field Galvanomagnetic Tensor of Bismuth at 4.2°K

Zitter, R. N.

doi:10.1103/physrev.127.1471

Cited by 115 publications

(29 citation statements)

References 24 publications

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“…• , which is probably due to the rhombohedral symmetry of the crystal which leads to the appearance of cross terms 36 in the magnetic-field expansion of the resistivity tensor.…”

Section: B Angular-dependent Mr Oscillationsmentioning

confidence: 99%

Angular-dependent oscillations of the magnetoresistance inBi2Se3due to the three-dimensional bulk Fermi surface

et al. 2010

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We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5×10 18 cm −3 , which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are solely due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angulardependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of an anisotropic three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

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“…• , which is probably due to the rhombohedral symmetry of the crystal which leads to the appearance of cross terms 36 in the magnetic-field expansion of the resistivity tensor.…”

Section: B Angular-dependent Mr Oscillationsmentioning

confidence: 99%

Angular-dependent oscillations of the magnetoresistance inBi2Se3due to the three-dimensional bulk Fermi surface

et al. 2010

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“…The electrons, however, are confined to three anisotropic Fermi surfaces, and µ then represents an effective transport mobility through many randomly oriented grains. In pure crystalline Bi, the electron and hole densities should be equal due to charge neutrality 49,50 . Our films are slightly n-doped, likely a result of lattice strain and vacancies due to the substrate mismatch and polycrystalinity.…”

Section: Methodsmentioning

confidence: 99%

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

Rudolph

Heremans

2011

Phys. Rev. B

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We present low temperature magnetoresistance measurements on lithographically defined bismuth wires. The phase coherence time and the spin-orbit scattering time are obtained by analysis of weak-antilocalization, with values for the phase coherence time supported by analysis of the universal conductance fluctuations present in the wires. We find that the phase coherence time is dominated by electron-phonon scattering above ≈ 2 K and saturates below that temperature, with saturation delayed to a lower temperature in wider wires. The spin-orbit scattering time shows a weak temperature dependence above 2 K, and also shows a dependence on wire width. The spinorbit scattering time increases as the width is reduced, as also observed in wires fabricated from spin-orbit coupled two-dimensional systems in semiconductor heterostructures. The similarity is discussed in the light of weak-antilocalization in the two-dimensional strongly spin-orbit coupled Bi(001) surface states.

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“…However, the intrinsic quantity H D /cϳlH D is the same for all Bi samples, and thus serves as a reference point to gauge the carrier mobility or mean-free path in various Bi samples. 10,20 We have determined the value of H D at different temperatures for various nanowires, as shown in Fig. 5.…”

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confidence: 99%