Small SiGe quantum dots obtained by excimer laser annealing

Genquan, Han; Zeng, Yu; Liu, Yan; Yu, Jinzhong; Cheng, Buwen; Hu, Yang

doi:10.1016/j.jcrysgro.2008.05.052

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…Han et al reported the results of annealing of a SiGe strained film with as-grown QDs by using 193-nm ArF excimer laser. 14 It was observed that the as-grown QDs vanished and laser-induced QDs appeared with time of irradiation. However, the variations in the size and shape of the laser-induced QDs were enormous.…”

Section: -4mentioning

confidence: 99%

“…Motivated by these advantages, pulsed laser annealing has been used for producing nanodots or nanocones on a semiconductor surface. [14][15][16][17][18] However, in all of the previous works reporting on pulsed laser annealing of semiconductors, the fabrication of nanostructures is limited to a small area. Uniformity over a large area is hard to achieve in these methods because it is hard to get a large laser beam profile with the required smoothness.…”

Section: Introductionmentioning

confidence: 99%

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Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

Qayyum

Chuang

et al. 2016

AIP Advances

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The capability to fabricate Ge/Si quantum dots with small dot size and high dot density uniformly over a large area is crucial for many applications. In this work, we demonstrate that this can be achieved by scanning a pre-deposited Ge thin layer on Si substrate with a line-focused pulsed laser beam to induce formation of quantum dots. With suitable setting, Ge/Si quantum dots with a mean height of 2.9 nm, a mean diameter of 25 nm, and a dot density of 6×1010 cm−2 could be formed over an area larger than 4 mm2. The average size of the laser-induced quantum dots is smaller while their density is higher than that of quantum dots grown by using Stranski-Krastanov growth mode. Based on the dependence of the characteristics of quantum dots on the laser parameters, a model consisting of laser-induced strain, surface diffusion, and Ostwald ripening is proposed for the mechanism underlying the formation of the Ge/Si quantum dots. The technique demonstrated could be applicable to other materials besides Ge/Si.

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Section: -4mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

Qayyum

Chuang

et al. 2016

AIP Advances

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“…3(b) and (c) are TEM images of a single island, in which we can see that there is a threading dislocation in the island. Based on the former experiments we realize that the laser-induced island is fully relaxed, and thermal effect accelerates the relaxation of strain, which finally forms disorder surface islands [8], [16]. With the decrease of irradiation intensity, droplet-like ripples become the dominant feature, as shown in Fig.…”

Section: Resultsmentioning

confidence: 81%

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Wang

et al. 2014

IEEE Photonics J.

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We have presented the mechanisms of nanosecond laser-induced specific nanostructures on a SiGe film by changing laser irradiation intensities. Our experimental results show that the types of the formed nanostructures were sensitive to the laser intensity because the structures such as cone-like protrusions, islands, and droplet-like ripples upon the irradiated SiGe film successively transform to ripple structures as the irradiation intensity decreases. Moreover, we obtain the threshold of the laser intensity for each nanostructure. Further studies give compelling evidence that the laser irradiation undergoes a transition from an initial thermal effect to an optical interference, which results in the evolution of SiGe nanostructures.

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Structural Changes in SiGe/Si Layers Induced by Fast Crystallization

Гайдук

Prakopyeu

2014

Subsecond Annealing of Advanced Materials

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Small SiGe quantum dots obtained by excimer laser annealing

Cited by 8 publications

References 21 publications

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

Formation of uniform high-density and small-size Ge/Si quantum dots by scanning pulsed laser annealing of pre-deposited Ge/Si film

Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning

Structural Changes in SiGe/Si Layers Induced by Fast Crystallization

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