Small signal equivalent circuit for Geiger-mode avalanche photodiodes

Moloney, Aoife M.; Morrison, Alan P.; Jackson, Jennifer C.; Mathewson, A.; Murphy, Patrick J.

doi:10.1049/el:20020183

Cited by 10 publications

(2 citation statements)

References 2 publications

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“…The anodes were grounded while the cathodes were terminated with 2.92 mm-width 50 Ω transmission lines, to provide impedance matching. 3 The photodiodes were mounted on 24 pin dual in line Ceramic packages, and wire bonded to contact output pins of the package using a wedge to wedge bonder. The wires bonded to the contacts are 50 µm AlSi (Aluminum Silicon).…”

Section: Experimental Configuration and Calibrationmentioning

confidence: 99%

Investigating the effects of package capacitance on the frequency response of shallow junction avalanche photodiodes

Cleary

Moloney²,

Morrison

2006

SPIE Proceedings

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Shallow junction silicon avalanche photodiodes developed for photon-counting applications exhibit a multiplication gain of several hundred when operated near breakdown. The small size and relatively large gain of these devices identifies them as potential candidates for short-haul optical networking at 650nm. Of importance is the frequency response of these devices and in particular the limitations on achievable bandwidth placed by the packaging of the diodes. This work investigates the effect package capacitance has on the frequency response of Geiger Mode Avalanche Photodiodes (GMAP) when compared to micro-stripline mounted devices. Impulse response measurements are made of the diode using a pulsed laser diode at a wavelength of 650 nm which provides pulses with full-width at half maximum (FWHM) of 70 ps typical and 200 ps maximum. A Fast Fourier Transform (FFT) is applied to the measured pulse to convert it to the frequency domain and de-embed the response of the test fixture and cable assembly. The electrical parameters of the packaged and micro-stripline mounted devices are compared in the frequency domain to see the effect of the package capacitance on the frequency response. Different device geometries are explored to identify suitable candidates for short-haul plastic optical fibre communications.

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Section: Experimental Configuration and Calibrationmentioning

confidence: 99%

Investigating the effects of package capacitance on the frequency response of shallow junction avalanche photodiodes

Cleary

Moloney²,

Morrison

2006

SPIE Proceedings

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“…The effects of the parasitics have been well established through small signal equivalent circuit modelling. [5][6][7] The junction capacitance (C j ) combined with the series resistance (R s ) results in an RC limitation which is given by 1/(2πR s C j ) and calculated to be ≈ 147 GHz for a 20 µm diode with 3 µm overlap. This value was obtained from taking the value of the capacitance at 5 V (216.71 fF ) found from equivalent circuit modelling 5 and the series resistance (5 Ω) again found from equivalent circuits.…”

Section: Small Area Diodesmentioning

confidence: 99%

Investigation of the bandwidth of Geiger-mode avalanche photodiodes

Moloney¹,

Morrison

2005

SPIE Proceedings

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Considerable interest currently exists in the use of plastic optical fibre (POF) for short distances data communications. Attenuation in POF is reduced at 650 nm compared to longer wavelength light and hence silicon based photoreceivers are ideal candidates for use with POF. The difficulty with the development of a CMOS photoreceiver, however, is the realisation of a high speed CMOS photodiode. This paper presents CMOS compatible, shallow junction Geiger-mode avalanche photodiodes (GMAPs) and investigates their bandwidth at 650 nm.Various sized GMAPs (500 µm and 250 µm diameter GMAPs with 20 µm cathode-anode overlaps and 20 µm diameter GMAPs with 3 µm, 4 µm and 5 µm overlaps) were mounted on PCBs. The anodes and cathodes were wirebonded to ground and 50 Ω transmission lines respectively. Impulse response measurements were made for each diode over a range of bias voltages, using a 650 nm picosecond pulsed laser diode. The bandwidths of each diode were calculated from the measured impulse responses and plots of bandwidth versus reverse bias were made. The results indicate very high speed operation is possible (> 1 GHz (20 µm diameter diode)), even for large detectors (> 250 MHz (500 µm diameter diode)).

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Microwave Modeling Techniques of Photodiodes

Gao

2010

Optoelectronic Integrated Circuit Design and Device Modeling

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Small signal equivalent circuit for Geiger-mode avalanche photodiodes

Cited by 10 publications

References 2 publications

Investigating the effects of package capacitance on the frequency response of shallow junction avalanche photodiodes

Investigating the effects of package capacitance on the frequency response of shallow junction avalanche photodiodes

Investigation of the bandwidth of Geiger-mode avalanche photodiodes

Microwave Modeling Techniques of Photodiodes

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