Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

Chow, T. Paul; Omura, Ichiro; Higashiwaki, Masataka; Kawarada, Hiroshi; Pala, Vipindas

doi:10.1109/ted.2017.2653759

Cited by 124 publications

(58 citation statements)

References 80 publications

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“…Taking further into account mobility and dielectric constant as expressed in the Baliga Figure-of-Merit (FoM), the limit line for SiC is 231 times below the silicon limit. The same rational applies for one-dimensional vertical GaN devices with a FoM advantage of 2097 [7]. Practically, the channel contribution, contact and substrate resistances, the re-distribution of current (especially in planar gate concepts), and last-but-not-least the ruggedness requirements such as short circuit operation [8] are barriers on the way towards the theoretical limits.…”

Section: B Wide Band-gap Devicesmentioning

confidence: 90%

“…Fig. 6 shows the corresponding graph in comparison to the vertical limit lines of silicon, SiC and GaN, where data points are taken from [7].…”

Section: Gan High Electron Mobility Transistormentioning

confidence: 99%

“…They should always flow as majority carriers within unde- . Reported values for area specific on-state resistance for GaN HEMTs and SiC in comparison to material specific limit lines for vertical devices [7]. 4H-SiC pleted areas.…”

Section: A Turn-off Lossesmentioning

confidence: 99%

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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

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Section: B Wide Band-gap Devicesmentioning

confidence: 90%

“…Fig. 6 shows the corresponding graph in comparison to the vertical limit lines of silicon, SiC and GaN, where data points are taken from [7].…”

Section: Gan High Electron Mobility Transistormentioning

confidence: 99%

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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

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“…Now a days most important researchers have been focused and interested on topic is wide band gap semiconductor materials and devices [12]- [14] because of high frequency and high temperature applications in microwave engineering [15]. Wide band semiconductor devices have very less losses, high speed switching and its operates at a high temperature operations [14], [15].There is an a increasing for high frequency applications to demand the range of in between the temperature is 30˚k to 200˚k for broad band amplifiers, wideband military communications, class A and class AB amplifiers and radars. [12] [13] .…”

Section: Introductionmentioning

confidence: 99%

Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications

Reddy¹,

scholar²

2019

IJISME

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The Gouriet oscillator is mainly dealing with 4H-SiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.

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“…he invention of the SuperJunction (SJ) concept [1,2] and the advent of wide bandgap (WBG) semiconductors [3][4][5] have provided new opportunities to break the Silicon limit [6][7][8] and enhance the performance of power semiconductor devices. On one hand, the SJ consists in the replacement of the drift region with multiple uniformly doped p-type and n-type columns [6,9,10].…”

Section: Introductionmentioning

confidence: 99%

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

Donato

Udrea

2018

IEEE Trans. Electron Devices

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The incomplete ionization of impurity atoms affects the free carrier concentration of several wide bandgap semiconductor materials even at room temperature, thus modifying the electrical properties of power devices. In this paper, the influence of the partial ionization of the dopants on the static and dynamic behavior of wide bandgap semiconductor based SuperJunction devices has been numerically investigated through extensive 2D finite element simulations. Whereas this physical effect has only a minor impact on the static device' characteristics, if a reverse bias pulse with a rise time comparable or smaller than the ionization time constant is applied to the structure, a "dynamic ionization" phenomenon can take place. The onset of this time dependent ionization is the cause of charge unbalance effects in the device structure, due to temporal dependence of the activated number of dopants. Electro-thermal simulations, which have been carried out for a 4H-SiC SuperJunction diode, show a nonuniform temperature distribution during the transients which leads, in turn, to the self-heating of the device. Through an accurate redesign of the cross-sectional view of the device, the drawbacks of the incomplete ionization have been mitigated and the device' performance enhanced.

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Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

Cited by 124 publications

References 80 publications

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications

Static and Dynamic Effects of the Incomplete Ionization in Superjunction Devices

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