Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition

Wang, Xinwei; Gordon, Roy G.

doi:10.1149/2.003303jss

Cited by 14 publications

(10 citation statements)

References 21 publications

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“…For thin-film materials, owing to the enhanced electron scattering with grain boundaries, interfaces, and surfaces as the film thickness decreases, the thinner films usually exhibit larger electrical resistivity as compared to the thicker films. Employing a simple scattering-induced model, ,, which lumps all these scattering effects into a characteristic scattering length of t 0 , the film resistivity (ρ) follows a linear relationship with the reciprocal of film thickness (1/ t ) via ρ = ρ 0 (1 + t 0 / t ), where ρ 0 is the bulk material resistivity. Accordingly, the measured resistivity is replotted in Figure b with respect to the reciprocal of film thickness.…”

Section: Results and Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Nickel Carbide from a Nickel Amidinate Precursor and Hydrogen Plasma

Guo

Shi

et al. 2018

ACS Appl. Mater. Interfaces

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A new atomic layer deposition (ALD) process for depositing nickel carbide (NiC ) thin films is reported, using bis( N, N'-di- tert-butylacetamidinato)nickel(II) and H plasma. The process shows a good layer-by-layer film growth behavior with a saturated film growth rate of 0.039 nm/cycle for a fairly wide process temperature window from 75 to 250 °C. Comprehensive material characterizations are performed on the NiC films deposited at 95 °C with various H plasma pulse lengths from 5 to 12 s, and no appreciable difference is found with the change of the plasma pulse length. The deposited NiC films are fairly pure, smooth, and conductive, and the x in the nominal formula of NiC is approximately 0.7. The ALD NiC films are polycrystalline with a rhombohedral NiC crystal structure, and the films are free of nanocrystalline graphite or amorphous carbon. Last, we demonstrate that, by using this ALD process, highly uniform NiC films can be conformally deposited into deep narrow trenches with an aspect ratio as high as 20:1, which thereby highlights the broad and promising applicability of this process for conformal NiC film coatings on complex high-aspect-ratio 3D architectures in general.

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Section: Results and Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Nickel Carbide from a Nickel Amidinate Precursor and Hydrogen Plasma

Guo

Shi

et al. 2018

ACS Appl. Mater. Interfaces

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“…The lowest obtained resistivity was found to be 0.78 mΩ cm for 40 nm thick films, and the resistivity increased as the films became thinner because of the increased probability for the electrons to scatter with surfaces, interfaces, and grain boundaries. Based on a scattering-induced model, ,, the resistivity ρ of the cobalt carbide may be expressed as ρ = ρ 0 (1 + t 0 / t ), where t is the film thickness, ρ 0 is the bulk resistivity, and t 0 is the characteristic electron scattering length to take into account the scattering effects from surfaces, interfaces, and grain boundaries. Accordingly, we plotted the resistivity ρ versus 1/ t and conducted the linear fitting as shown in Figure b.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Cobalt Carbide Thin Films from Cobalt Amidinate and Hydrogen Plasma

Fan

Guo

et al. 2019

ACS Appl. Electron. Mater.

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Atomic layer deposition (ALD) of cobalt carbide thin films is reported by using bis( N , N ′-diisopropylacetamidinato)cobalt(II) (Co(amd)2) and H2 plasma. The process shows a good self-limiting ALD film growth behavior for a fairly wide temperature range from 70 to 160 °C, and the growth rate is 0.066 nm/cycle for the deposition within the temperature range. The deposited cobalt carbide thin films are generally smooth and pure, and the film composition is approximately Co3C0.7 for the deposition at 80–200 °C. Notably, all the carbon in the as-deposited films forms cobalt carbide, and no carbon–carbon bonds are detected by X-ray photoelectron spectroscopy. Raman spectroscopy also confirms the absence of graphite or amorphous carbon in the as-deposited films. The films are nano-polycrystalline as deposited, and the crystal structure is the hexagonal Co3C structure. The films can decompose into hcp-Co metal and amorphous carbon upon the thermal annealing in N2 at 400 °C. The resistivity and magnetization of the as-deposited films are also characterized. It is further shown that by use of this plasma-assisted ALD process highly conformal cobalt carbide films can be deposited into the trench structures with a high aspect ratio of 20:1. In the last, the ALD growth chemistry is studied by using the in situ quartz crystal microbalance (QCM) technique, and the QCM results suggest that the structure of the amidinate ligand in the Co(amd)2 precursor largely falls apart upon its reaction with the surface during the ALD.

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“…Ultrathin continuous films without any voids are needed when Ru is used as a diffusion barrier for Cu interconnects. [27][28][29][30] The application of Ru as a conducting interconnect material requires Ru with low resistivity and low impurity contents. 18 ALD processes typically consist of the alternating dosing of precursor and coreactant gasses that interact with a substrate through self-limiting surface reactions.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation

Chopra

Vos

Verheijen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition

Cited by 14 publications

References 21 publications

Atomic Layer Deposition of Nickel Carbide from a Nickel Amidinate Precursor and Hydrogen Plasma

Atomic Layer Deposition of Nickel Carbide from a Nickel Amidinate Precursor and Hydrogen Plasma

Atomic Layer Deposition of Cobalt Carbide Thin Films from Cobalt Amidinate and Hydrogen Plasma

Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation

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