Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

Abstract

Atomically flat, fully strained Si1−xGex layers with thicknesses ranging from 8 to 180 nm were grown on Si(001) at 450 °C by gas-source molecular beam epitaxy from Ge2H6/Si2H6 mixtures. We show that smooth, relaxed alloy layers are obtained, without the necessity of using several-microns-thick compositionally graded layers, via in situ rapid thermal annealing of fully strained Si1−xGex(001) layers at 1000 °C for 10 s. Relaxed Si0.75Ge0.25(001) layers with thicknesses of 100–180 nm were found to have surface widths of ≃5 nm, comparable to the best results obtained using thick graded buffer layers.

Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe

“…16 Before the deposition of LaAlO 3 films, Si 0.75 Ge 0.25 substrate was cleaned in 5% HF solution. 16 Before the deposition of LaAlO 3 films, Si 0.75 Ge 0.25 substrate was cleaned in 5% HF solution.…”

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

“…These are evidently very favorable in comparison with the values for a conventional graded buffer grown by LEPECVD or other growth techniques [8,30]. In particular, the AFM images in Fig.…”

Influence of UTA-Si buffer layers on the growth of SiGe films analyzed by high resolution X-ray reciprocal space map

“…4, we assume that the degree of strain relaxation with the lattice constant of bulk SiGe is 100%, and that of pseudomorphic SiGe is 0%. The fully relaxed SiGe peak point is located in 2θ/ω scan axis, which can be ascertained combined with bulk SiGe lattice constant a 0 = 0.5485 nm for Si 0.75 Ge 0.25 [11]; the pseudomorphic SiGe has the same in-plane lattice constant as Si, so its peak point can be decided combined with the a ⊥ value calculated from the relationship a ⊥ = 1+γ 1−γ a 0 − 2γ 1−γ a // , in which γ is the Poisson ratio [12]. Figure 4 explains our analytical method for obtaining the degree of the strain-relaxation in the SiGe layers estimated from the real peak position of SiGe(113) reflection in the two-dimensional reciprocal-space map.…”