Sn etching with hydrogen radicals to clean EUV optics

Herpen, M.M.J.W. van; Klunder, D.J.W.; Soer, Wouter; Moors, Roel; Banine, VY Vadim

doi:10.1016/j.cplett.2009.11.030

Cited by 46 publications

(38 citation statements)

References 7 publications

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“…A group of low melting point metals, including tin (Sn) [22][23][24][25], indium (In) [23,26,27], gallium (Ga) [28] and bismuth (Bi) [29], have been adopted to mediate the VLS growth of SiNWs in a Plasma Enhanced Chemical Vapor Deposition (PECVD) system. In this way, we have demonstrated Sn assisted SiNW growth at a substrate temperature as low as 240 1C [23], with yet a very important bonus that after growing the SiNWs into a desired length, the remnant Sn can be removed by a simple hydrogen (H 2 ) plasma etching without the need of any ex situ cleaning [30]. All these unique abilities enabled us to fabricate a-Si:H radial PIN junction solar cells showing conversion efficiencies up to 6% [31,32].…”

Section: Introductionmentioning

confidence: 97%

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Misra¹,

Yu²,

Foldyna³

et al. 2013

Solar Energy Materials and Solar Cells

118

113

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Section: Introductionmentioning

confidence: 97%

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Misra¹,

Yu²,

Foldyna³

et al. 2013

Solar Energy Materials and Solar Cells

118

113

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“…The transformation can then lead to a sizable reduction of tin deposition. This is often rather difficult to achieve in reasonably short time by other methods of dry cleaning like, for example, plasma etching schemes with hydrogen radicals [19,20].…”

Section: Introductionmentioning

confidence: 99%

Induction of tin pest for cleaning tin-drop contaminated optics

Böwering

2017

Materials Chemistry and Physics

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Highlights Tin pest induction leads to embrittlement of tin drops after β → α Sn transformation.  The purity grade influences the transformation speed of tin very strongly.  Tin drops on multilayer-coated optics disintegrate after β → α Sn transformation.  Tin drop contamination of optics is cleaned via phase transformation at -24 °C.  Reflectance of multilayer-coated mirrors is restored after tin drop transformation. Graphical Abstract AbstractTin pest, the allotropic β → α phase transformation of tin, was examined for use in cleaning of tin-contaminated optics. Induction of change in material structure led to disintegration of tin samples into pieces and powder. The transition times were studied for tin drops of different purity grades, using inoculation with α-Sn seed particles, also after prior mechanical deformation and surface oxide removal. For tin of very high purity levels fast nucleation within hours and full transformation within a day could be achieved during cooling at -24 °C, resulting in strong embrittlement of the material. Tin dripped onto samples of multilayer-coated optics as used in extreme ultraviolet lithography machines was made cleanable by phase transition after inoculation and cooling. The reflectance of multilayer-coated mirrors was found to decrease by no more than 1% with this cleaning method.

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“…Once SnO 2 was removed from the glass surface, the bonding strength between Sn particles and glass surface loosened, resulting in a removal of Sn particles from glass surface. Therefore, Sn can be etched by floating wire-assisted H 2 /Ar plasma, this can be applied to remove the Sn contamination on EUV optics of EUV lithography systems [11][12][13][14] .…”

Section: Model Of Forming Spherical Sn Particles By H 2 /Ar Plasma Tmentioning

confidence: 99%

“…Tin (Sn) metal has been extracted from ores for a long time 1 , 2 , and is a highly demanded material for different industrial applications including Pb-free solder 3 , 4 , 5 , batteries 6 – 8 , and transparent electrodes 9 , 10 . Removal of Sn contamination on extreme ultraviolet (EUV) lithography optics can be applied by using H radicals 11 – 14 . Moreover, Sn nano/micro-particles embedded in SiO 2 matrix or Sn-implanted SiO 2 structure are potentially applied in development of novel devices 15 , 16 .…”

Section: Introductionmentioning

confidence: 99%

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H2/Ar plasma at atmospheric pressure

Nguyen

Sasaki

Tsutsumi

et al. 2020

Sci Rep

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A green method to synthesize spherical Sn particles by reducing SnO2 film in atmospheric-pressure H2/Ar plasma at low temperatures for various applications is presented. The floating wire-assisted remotely-generated plasma with a mixture of 0.05% H2/Ar gas formed spherical metallic Sn particles by reducing a SnO2 layer on glass substrate. During the reduction process, H radical density was measured by using vacuum ultraviolet absorption spectroscopy, and plasma properties including electron density and gas temperature were diagnosed by optical emission spectroscopy. The inductively coupled generated plasma with a high electron density of 1014 cm−3, a hydrogen atom density of 1014 cm−3, and a gas temperature of 940 K was obtained at a remote region distance of 150 mm where the SnO2/glass substrate was placed for plasma treatment. The process has been modeled on the spherical Sn formation based on the reduction of SnO2 films using H radicals. Depending on the treatment condition, the total reduction area, where spherical Sn particles formed, was enlarged and could reach 300 mm2 after 2 min. The substrate temperature affected the expansion rate of the total reduction area and the growth of the Sn spheres.

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Sn etching with hydrogen radicals to clean EUV optics

Cited by 46 publications

References 7 publications

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Induction of tin pest for cleaning tin-drop contaminated optics

Formation of spherical Sn particles by reducing SnO2 film in floating wire-assisted H2/Ar plasma at atmospheric pressure

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