SnO2:F films synthesized by chemical vapour deposition technique using hydrofluoric acid as doping material

Abstract

Highly transparent and highly conducting films of SnO2 : F were prepared by chemical vapour deposition technique. The films prepared at 350°C substrate temperature and 2.5 lit. min-~ flow rate of oxygen showed maximum figure of merit. The optimum doping concentration of fluorine was 1.02 wt ~o-The Hall experiment showed that the films prepared at optimum conditions had high carrier concentration and high mobility.

Precursors for the Formation of Tin(IV) Oxide and Related Materials

“…In dual-source CVD procedures, one of the tin precursors discussed above [Me 4 Sn, SnCl 4 , SnCl 2 , Sn(NMe 2 ) 4 ] along with either F 2 , 78 NH 4 F, 79,80 HF, 70,81 BrCF 3 69 and other fluorocarbons, 73 or CF 3 CO 2 H 82 as sources of fluorine have been reported. However, the "activity" of the fluorine within the oxide lattice is sometimes variable and dependent on deposition conditions.…”

Chemical insights into electrophilic fluorination of SnO2for photoelectrochemical applications

“…The precursor with the N-F bond releases electrophilic uorine species in the solution at low temperature with potential to readily react with the metal oxides. Other solution processes include corrosive precursors such as HF 33 and NH 4 F 34 that etch the oxides or even the less reactive NaF precursor, 35 which acts as a growth-directing agent, and the uorine content is nontraceable in the SnO 2 lattice. 36,37 The F-TEDA precursor provides a highly reactive yet safe to use method, unlike direct uorination by uorine-containing gases such as (Ar:F 2 ), 38 SF 6 , 39 and CF 4 .…”