SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

Hung, Shao-Tsu; Chang, Chi‐Jung; Chen, Chin Ching; Lo, Chien-Fong; Ren, F.; Pearton, S. J.; Kravchenko, Ivan I.

doi:10.1116/1.4736974

Cited by 6 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sensitivity of the developed sensor was 3.5 times higher than the SnO 2 -gated AlGaN/GaN transistor under 1 atm. 40 In addition, the developed sensor also exhibited the sensitivity about 4.5 times higher than that of the multi-walled carbon nanotubes based oxygen sensor under the same condition. 41 The experimental results conrmed the wide detection range and good sensing performance for the developed oxygen sensor assisted with UV irradiation.…”

Section: Resultsmentioning

confidence: 86%

“…Fig. 40 In addition, the developed sensor also exhibited the sensitivity about 4.5 times higher than that of the multi-walled carbon nanotubes based oxygen sensor under the same condition. Results again conrmed that the growth direction of the nanorods was perpendicular to the substrate, indicating that the ZnO was grown along the c-axis.…”

Section: Oxygen Detectionmentioning

confidence: 80%

See 1 more Smart Citation

Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

Chou

Lin

2014

RSC Adv.

View full text Add to dashboard Cite

This paper presents a novel ultraviolet (UV) irradiation assisted nanostructured ZnO film for high performance oxygen sensing under a low working temperature. Nanorod ZnO structures with high exposing area are synthesized on a glass substrate with interdigital sensing electrodes via the developed two-stage sol-gel and hydrothermal processes. A UV-LED with an emission wavelength of 370 nm is then used to enhance the sensing performance of the nanostructured ZnO film. The oxygen sensor can work at a temperature of 50 C with the assistance of UV irradiation. The response of the UV-assisted ZnO film is 4.66 times larger than the same film without UV exposure. The method developed in the present study provides a simple yet high performance method for oxygen sensing under low operation temperatures.

show abstract

Section: Resultsmentioning

confidence: 86%

Section: Oxygen Detectionmentioning

confidence: 80%

Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

Chou

Lin

2014

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…145 HEMT sensor based on AlGaN/GaN with SnO 2 gate was capable of detecting 1% oxygen nitrogen at 100 °C. 146 Likewise integrated IZO gated AlGaN/GaN HEMT O 2 sensor, detected oxygen even at low temperature when compared to the conventional oxide-based oxygen sensors. 147…”

Section: Wideband Semiconductor Gas Sensormentioning

confidence: 99%

Review—Semiconductor Materials and Devices for Gas Sensors

Raju¹,

Li²

2022

J. Electrochem. Soc.

View full text Add to dashboard Cite

Gas sensors are frequently used for detecting toxic gases and vapors for environmental control, industrial monitoring, and household safety. Semiconductor conductivity can be modified by doping or fine-tuned by applying an electric or magnetic field in an ultra-wide range (10-7 S/cm to 102 S/cm). The conduction of semiconductor is significantly raised or reduced upon the exposure to external conditions, such as temperature variation, light, heat, mechanical stress, or chemicals. Thus, semiconductors are excellent materials for sensors and the device structures are critical for sensing performance. The commonly used semiconductors materials include Si, Ge, III-V, and metal oxide semiconductors. Recently carbon-based materials gain signification attention due to their unique electrical, optical and mechanical properties. There are two major semiconductor gas sensors: resistor-based and FET-based sensors. In this review, the semiconductor materials, sensor device structure as well as gas sensing mechanisms will be systematically categorized, described and explored, with the focus on metal oxides, GaN, SiC, 2D-TMD and carbon-based gas sensors. The recent progress in new semiconductor gas sensors will be thoroughly reviewed and summarized, with a hope to show the trend in semiconductor gas sensor technology.

show abstract

“…By functionalizing the gate area of AlGaN/GaN HEMTs with different analytes, such as antibodies, enzymes, polyimides, or metals, AlGaN/GaN HEMT based sensors can detect different chemicals, such as DNA, proteins, kidney disease markers, prostate specific antigen, breast cancer antigen, lactose, glucose, mercury, chloride ion, pH, hydrogen, carbon dioxide, carbon monoxide, oxygen, botulinum toxin, and Perkinsus Marinus. [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] In this work, we report a study of Pt-gated AlGaN/GaN HEMT based Schottky diode sensors for methane detection. The effects of ambient temperature and methane concentration on the sensing response time and sensing sensitivity were investigated.…”

Section: Introductionmentioning

confidence: 98%

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Liu

Ren

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Self Cite

View full text Add to dashboard Cite

Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

show abstract

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors

Cited by 6 publications

References 19 publications

Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

Review—Semiconductor Materials and Devices for Gas Sensors

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Contact Info

Product

Resources

About