2008
DOI: 10.1016/j.jeurceramsoc.2007.06.011
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SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

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Cited by 265 publications
(153 citation statements)
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“…This II-IV semiconductor presents a wide band-gap (3.37 eV at room temperature), and a large exciton binding energy (60 meV), and is, therefore, one of the most promising candidates for room temperature UV lasers and short-wavelength optoelectronic devices. Some detailed reviews have been published previously, dedicated to ZnO synthesis [6], electronic properties [7], varistor applications [8], quantum dots [9] and photonic devices [10], all of which show the constant interest of scientists wanting to improve its properties in various fields [11].…”
Section: Introductionmentioning
confidence: 99%
“…This II-IV semiconductor presents a wide band-gap (3.37 eV at room temperature), and a large exciton binding energy (60 meV), and is, therefore, one of the most promising candidates for room temperature UV lasers and short-wavelength optoelectronic devices. Some detailed reviews have been published previously, dedicated to ZnO synthesis [6], electronic properties [7], varistor applications [8], quantum dots [9] and photonic devices [10], all of which show the constant interest of scientists wanting to improve its properties in various fields [11].…”
Section: Introductionmentioning
confidence: 99%
“…6 or for the model without Rs resistance, as reported in the literature [19]. Other more complex models, which incorporate the influence of charge densities in the grains associated with the thickness of the intergranular layer, have been reported [20]. Fig.…”
Section: Resultsmentioning
confidence: 86%
“…This II-IV semiconductor presents a wide band-gap (3.37 eV at room temperature), and a 2 of 12 large exciton binding energy (60 meV), being one of the most promising candidates for room temperature UV lasers and short-wavelength optoelectronic devices. Some detailed reviews have been published previously dedicated to ZnO synthesis [6], electronic properties [7], varistor applications [8], quantum dots [9] and photonic devices [10], which show the constant interest of scientists for improving its properties in various fields [11]. ZnO was synthesized by precipitation in mild hydrothermal conditions (90 °C) using a tubular reactor: the Segmented Flow Tubular Reactor (SFTR) [12], [13].…”
Section: Introductionmentioning
confidence: 99%