SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation

Tu, Zexin; Wang, Kun; Ji, Liwei; Wan, Jiaxian; Luo, Qiren; Wu, Hao; Liu, Chang

doi:10.1016/j.apsusc.2023.156517

Cited by 4 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The width of emitted electrons ( W ) from the UPS spectrum was determined to be 15.45 eV, and the E F – E VBM (where E F and E VBM are the Fermi energy and valence band maxima, respectively) was calculated to be 0.31 eV using SnSe valence band spectra, as shown in Figure b. As a result, in eq , the χ value comes out to be 4.4 eV, which is in good agreement with the literature . The band structure of Pt with SnSe was estimated by considering all the calculated parameters like χ, E F – E VBM, and E g of SnSe in Figure c.…”

Section: Results and Discussionsupporting

confidence: 71%

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

Goswami,

Prajapat,

Vashishtha

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Layered tin selenides have gained tremendous interest due to their distinct tunable semiconducting properties, narrow band gap, low cost, and feasibility for large-scale production. However, the phase controllability of SnSe and SnSe 2 is a major challenge for device applications, which should be addressed to ensure repeatability of crystallographic phase, morphology, defects, etc. We have synthesized highly crystalline and phase-controlled (mono, di, mix) tin selenide films using a lowpressure chemical vapor deposition technique by coupling the precursor and substrate temperatures. The optoelectronic behavior of the constructed metal−semiconductor− metal (MSM) tin selenide-based devices responds to the wide spectral range from visible blind (UVB) to near-infrared (NIR). The designed SnSe 2 -based photodetector has a high optical response to visible light (532 nm) with responsivity, noise equivalent power, and external quantum efficiency of 1260 mA W −1 , 8.27 × 10 −12 W Hz −1/2 , and 295%, respectively. However, the SnSe-based photodetector exhibits a high response for infrared wavelength (1064 nm) with responsivity, external quantum efficiency, and noise equivalent power of 3320 mA W −1 , 388%, and 2.88 × 10 −12 W Hz −1/2 , respectively. The SnSe-based photodetector outperforms the SnSe 2 and SnSe mix (mixed phase)-based devices in the optical wavelength range from UVB to NIR. A thorough analysis of a phase-controlled tin selenide photodetector with broad optical detecting capability indicates its adaptability to various industrial and technological domains.

show abstract

Section: Results and Discussionsupporting

confidence: 71%

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

Goswami,

Prajapat,

Vashishtha

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Significantly, Sn 3d 5/2 and 3d 3/2 peaks have been split into two peaks, respectively, suggesting the divalent nature of the Sn ion. The peaks located at 485.18 and 493.6 eV are attributed to Sn (2+) , confirming the formation of Sn‐Se [34] . While the peaks at 486.6 and 495.0 eV are attributed to Sn (4+) , they can also be attributed to surface SnO 2 due to the easily oxidizable nature of SnSe [35] .…”

Section: Resultsmentioning

confidence: 69%

“…The peaks located at 485.18 and 493.6 eV are attributed to Sn (2 +) , confirming the formation of Sn-Se. [34] While the peaks at 486.6 and 495.0 eV are attributed to Sn (4 +) , they can also be attributed to surface SnO 2 due to the easily oxidizable nature of SnSe. [35] As observed, the pristine SnSe contained a substantial amount of oxygen due to the reaction of Sn ions with oxygen.…”

Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 99%

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Sarkar,

Nisha,

Kumar

et al. 2023

ChemistrySelect

View full text Add to dashboard Cite

Alloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work‘s results offer useful insight into the prospective device applications of two‐dimensional alloy materials.

show abstract

Monolithic three-dimensional integration with 2D material-based p-type transistors

Zou,

Reo,

Heo

et al. 2025

Materials Science and Engineering: R: Reports

View full text Add to dashboard Cite

SnSe ambipolar thin film transistor arrays with copper-assisted exfoliation

Cited by 4 publications

References 28 publications

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

Phase-Controlled Tin Selenide Photodetectors for Visible Blind to Near-Infrared Optical Radiation

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Monolithic three-dimensional integration with 2D material-based p-type transistors

Contact Info

Product

Resources

About