SO<sub>2</sub> Monitoring With Solid State-Based UV Spectroscopy Compact Apparatus

Giudice, Gaetano; Sciuto, Antonella; Meli, Alessandro; D’Arrigo, Giuseppe; Longo, Domenico

doi:10.1109/jsen.2019.2913221

Cited by 7 publications

(1 citation statement)

References 23 publications

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“…1, in the 0,8-1,7µm wavelength range, only three semiconductor materials have a high absorption coe cients including germaniumand III-V ternary (InGaAs) and quaternary (InGaAsP) compounds. [2] Germanium, after being the basis of the rst transistor in 1947, was also used for its photodetection properties from the 1950s in the form of a phototransistor. The rst Germanium avalanche photodiodes were developed in the mid-1960s, then during the beginnings of communications by optical bers where they were in competition with photodiodes based on III-V semiconductors, which were adopted at the expense of Germanium, in particular thanks to their higher performances.…”

Section: Introductionmentioning

confidence: 99%

Highly Improved Mis Photodetector Sensitivity Using Ge Nanocrystals

Aouassa¹,

M’gaieth²,

Azeza³

et al. 2021

Preprint

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We report the high performances of Metal-Insulator-Semiconductor Photodetectors (MIS PD) made with crystalline Ge nanocrystals (Ge NCs) as the active absorbers embedded in a silicon dioxide matrix. The Ge NCs have been obtained by a combination of Ge deposition by Molecular Beam Epitaxy (MBE) on tunnel thermal silicon oxide and solid state dewetting processes. Ge NCs structure and morphology are characterized by High Resolution Transmission Electron Microscopy (HRTEM) and Scanning Electron Microscopy (SEM). The photocurrent generation is determined by I-V spectroscopy and Photocurrent spectroscopy. We evidence the role of high quality Ge NCs on photocurrent and explain the high sensitivity of MIS photodetector as a result of transport mechanisms via photoexcited Ge NCs.These results indicate that the crystalline Ge NCs obtained via solid state dewetting can be integrated with opto-electronics and photonics technologies to produce new high performance optoelectronic devices fully compatible with Complementary Oxide Metal (CMOS) technology.

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Section: Introductionmentioning

confidence: 99%