Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface

Ohi, Akihiko; Labis, Joselito P.; Morikawa, Y.; Fujiki, Toshinori; Hirai, Masaaki; Kusaka, M.; Iwami, Motohiro

doi:10.1016/s0169-4332(01)00860-1

Cited by 9 publications

(9 citation statements)

References 15 publications

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“…Ohi et al, 2002;Gasser et al, 1997;Roccaforte et al, 2001;Madsen et 1998; Litvinov et al, 2002;Marinova et al, 1996. The dominant phase formed is almost independent of the polytype, the polarity of the SiC and the details of the annealing cycle.…”

Section: Reaction Productsmentioning

confidence: 98%

“…Generally, Ni 2 Si is the dominant species in a large temperature range between 600 and 950°C (Ohi et al, 2002;Gasser et al, 1997;La Via et al 2002;Abe et al, 2002;Roccaforte et al, 2001;& Kestle et al, 2000, as shown in the X-ray diffraction (XRD) spectra in Fig. 5 (Madsen et al, 1998& Bächli et al, 1998.…”

Section: Reaction Productsmentioning

confidence: 98%

“…Close examination of line position and shape of G and 2D Raman peaks together with the intensity ratio I D /I G obtained at different temperatures indicate that more highly graphitised and less disordered carbon is promoted by a higher annealing temperature at 950 o C. Similar results have been reported in ref. (Ohi et al, 2002;Kurimoto & Harikawa, 2002). For temperatures of 600 and 800°C, Ohi et al found the formation of C with modified π bonds when compared to graphite.…”

Section: Contact Formation On Silicon Carbide By Use Of Nickel and Tamentioning

confidence: 99%

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Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Cao¹,

Nyborg²

2011

Properties and Applications of Silicon Carbide

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Section: Reaction Productsmentioning

confidence: 98%

Section: Reaction Productsmentioning

confidence: 98%

Section: Contact Formation On Silicon Carbide By Use Of Nickel and Tamentioning

confidence: 99%

See 1 more Smart Citation

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Cao¹,

Nyborg²

2011

Properties and Applications of Silicon Carbide

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“…Particularly, the formation of Ni 2 Si phase begins at 500°C and increases with increasing temperature. The Ni 2 Si (2Ni + SiC fi Ni 2 Si + C) is the most dominant phase observed up to 950°C due to its high value of negative Gibbs free energy of the reaction (Ref [29][30][31]. The presence of nickel silicide (Ni 2 Si) phase in the Ni/SiC coating is reported to improve the wear, corrosion, and oxidation resistance of the substrates (superalloys and stainless steel) ( Ref 32,33).…”

Section: Particle Size and Microstructurementioning

confidence: 99%

Effect of Compaction Load and Sintering Temperature on Tribological and Mechanical Behavior of Ni/SiC/MoS2 Composites

Prabhu

2016

J. of Materi Eng and Perform

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In the present investigation, the effects of compaction load and sintering temperature on the tribological and mechanical behavior of Ni/20%SiC/7%MoS 2 hybrid composites was studied. The density, compression strength, and hardness of the composites were evaluated and compared. The wear properties of the composites were evaluated for the test condition of 1 m/s speed and 10 N load using a pin-on-disk tribometer. The braking performance of the composites was evaluated in a subscale dynamometer for the 500 kJ energy condition. The microstructure and wear surface morphology of the composites were analyzed by stereo, optical, and scanning electron microscopes. From the results, the following important conclusions are drawn: (1) the compaction load of 1400 kN and sintering temperature of 900°C are optimum to obtain the best combination of tribological and mechanical properties; (2) the properties such as density, compression strength, hardness, wear, and friction increase up to a critical sintering temperature, and then decrease later; (3) the composition and thickness of the interface reaction product phases (Ni 2 Si, Ni 3 Si, and graphite) play a key role in deciding the strength of Ni/SiC interface that consequently affects the mechanical and tribological properties of the composites; (4) the abrasive wear is found to be the main wear mechanism in the highly densified composites, whereas the delamination wear and the thirdbody wear are major wear mechanisms in the poorly densified composites; and (5) the better braking performance of the highly densified composites is attributed to the absence of third-body wear, controlled flow of solid lubricant, and lower porosity.

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“…8,10,11 It has been reported that Ni reacts with SiC to form Ni 2 Si or Ni 31 Si 12 at temperatures between 550°C and 950°C, with the later being the dominant silicide. 10,12,13 Since Ni is the most commonly used metal for Schottky contacts on SiC, it is essential to carefully study its characteristics with different thermal processing and to develop methods of improving its thermal reliability and electrical properties for high-power/ high-temperature applications.…”

Section: Introductionmentioning

confidence: 99%

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

Oder

Sung

Barlow

et al. 2009

Journal of Elec Materi

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High-temperature processing was used to improve the barrier properties of three sets of n-type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum average barrier height of 1.78 eV and an ideality factor of 1.09 using current-voltage measurements on diodes annealed in vacuum at 500°C for 24 h. Nonannealed contacts had an average barrier height of 1.48 eV and an ideality factor of 1.85. The Rutherford backscattering spectra of the Ni/SiC contacts revealed the formation of a nickel silicide at the interface, accompanied by a substantial reduction in oxygen following annealing.

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Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface

Cited by 9 publications

References 15 publications

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Effect of Compaction Load and Sintering Temperature on Tribological and Mechanical Behavior of Ni/SiC/MoS2 Composites

Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing

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