Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO<sub>2</sub>(Ti)/SiO<sub>2</sub>/Si stacks

Filatova, E. O.; Кожевников, И. В.; Sokolov, Andréy; Ubyĭvovk, E. V.; Yulin, Sergiy; Gorgoi, Mihaela; Schäfers, F.

doi:10.1088/1468-6996/13/1/015001

Cited by 25 publications

(20 citation statements)

References 39 publications

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“…While the oxidation of TiN in air is well known 29, 31 to result in few nm thick oxide and oxynitride layers, a possible oxygen scavenging from underlying oxide layer (γ-Al 2 O 3 ) was first revealed in our previous work 8 . To evaluate the actual depth distribution of chemical states of titanium atoms and to determine the thicknesses of individual layers, which constitute the “real” TiN electrode, we used the approach described in details in our previous reports 40, 42 . Within this approach, the experimental peak area dependencies on the electron emission angle (at fixed excitation energy) are modeled by theoretical curves constructed based on the following recurrent formula for the intensity of an HAXPES peak from an n th layer in a multi-layer stack:here, θ is the electron emission angle with respect to the sample normal, n numbers the structurally different layers ( n = 1 corresponds to the upper layer), σ n is the photoexcitation cross-section, λ n is the inelastic mean free path calculated by means of TPP-2M formula 27 , γ n is the orbital angular symmetry factor, c n is the atomic concentration, and d n is the thickness of the n th layer.…”

Section: Resultsmentioning

confidence: 99%

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Filatova

Konashuk

Sakhonenkov

et al. 2017

Sci Rep

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Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiNxOy (≈1-nm thick) interlayer at the interface between γ-Al2O3 film and TiN electrode due to oxygen scavenging from γ-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4 nm)/TiNxOy(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al2O3 interface as compared to the TiN/γ-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.

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Section: Resultsmentioning

confidence: 99%

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Filatova

Konashuk

Sakhonenkov

et al. 2017

Sci Rep

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“…Resonant soft X-ray elastic scattering has been used to study polymeric and organic materials (Wang et al, 2005;Araki et al, 2006;Mitchell et al, 2006;Mezger et al, 2011;Collins et al, 2012;Pasquali et al, 2014;Stone & Kortright, 2014;Pauli et al, 2014), to study ionic liquids (Mezger et al, 2013), for the electronic and structural analysis of hard matter (Nayak et al, 2006;Valvidares et al, 2010;Ksenzov et al, 2010;Park et al, 2013;Krumrey et al, 2011;Filatova et al, 2012;Nayak et al, 2010Nayak et al, , 2015Nayak & Lodha, 2013a,b;Macke et al, 2014) and to obtain the magnetization profile in magnetic structures (Tonnerre et al, 1995;Sacchi et al, 1998;Benckiser et al, 2011;Bertinshaw et al, 2014;Macke & Goering, 2014). However, very little effort has previously been put into using resonant soft X-ray scattering to measure the spatially resolved chemically sensitive low-Z atomic profile of low-contrast interface structures.…”

Section: Introductionmentioning

confidence: 99%

Element-specific structural analysis of Si/B₄C using resonant X-ray reflectivity

2015

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Element-specific structural analysis at the buried interface of a low electron density contrast system is important in many applied fields. The analysis of nanoscaled Si/B 4 C buried interfaces is demonstrated using resonant X-ray reflectivity. This technique combines information about spatial modulations of charges provided by scattering, which is further enhanced near the resonance, with the sensitivity to electronic structure provided by spectroscopy. Si/B 4 C thinfilm structures are studied by varying the position of B 4 C in Si layers. Measured values of near-edge optical properties are correlated with the resonant reflectivity profile to quantify the element-specific composition. It is observed that, although Si/B 4 C forms a smooth interface, there are chemical changes in the sputtered B 4 C layer. Nondestructive quantification of the chemical changes and the spatial distribution of the constituents is reported.

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“…It allows nondestructive characterization and depth-profiling of microstructures, layered systems and buried interlayers to be carried out (Filatova et al, 2009a,b). It enables atomic concentration profiles (Filatova et al, 2012 to be reconstructed, polarization dependence and anisotropy effects of helical substances to be investigated (Filatova & Lukyanov, 2002;Filatova et al, 2005), and information about roughness of surface and buried interface structures to be obtained (Konyushenko et al, 2014). Based on accurate reflection coefficient spectra it is possible to calculate the spectral dependence of optical constants (Filatova et al, 1999(Filatova et al, , 2009b.…”

Section: Issn 1600-5775mentioning

confidence: 99%

The at-wavelength metrology facility for UV- and XUV-reflection and diffraction optics at BESSY-II

et al. 2016

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A technology center for the production of high-precision reflection gratings has been established. Within this project a new optics beamline and a versatile reflectometer for at-wavelength characterization of UV-and XUV-reflection gratings and other (nano-) optical elements has been set up at BESSY-II. The Plane Grating Monochromator beamline operated in collimated light (c-PGM) is equipped with an SX700 monochromator, of which the blazed gratings (600 and 1200 lines mm À1 ) have been recently exchanged for new ones of improved performance produced in-house. Over the operating range from 10 to 2000 eV this beamline has very high spectral purity achieved by (i) a four-mirror arrangement of different coatings which can be inserted into the beam at different angles and (ii) by absorber filters for high-order suppression. Stray light and scattered radiation is removed efficiently by double sets of in situ exchangeable apertures and slits. By use of in-and off-plane bending-magnet radiation the beamline can be adjusted to either linear or elliptical polarization. One of the main features of a novel 11-axes reflectometer is the possibility to incorporate real life-sized gratings. The samples are adjustable within six degrees of freedom by a newly developed UHV-tripod system carrying a load up to 4 kg, and the reflectivity can be measured between 0 and 90 incidence angle for both s-and p-polarization geometry. This novel powerful metrology facility has gone into operation recently and is now open for external users. First results on optical performance and measurements on multilayer gratings will be presented here.

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Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO₂(Ti)/SiO₂/Si stacks

Cited by 25 publications

References 39 publications

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Element-specific structural analysis of Si/B₄C using resonant X-ray reflectivity

The at-wavelength metrology facility for UV- and XUV-reflection and diffraction optics at BESSY-II

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Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks

Cited by 25 publications

References 39 publications

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Element-specific structural analysis of Si/B4C using resonant X-ray reflectivity

The at-wavelength metrology facility for UV- and XUV-reflection and diffraction optics at BESSY-II

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Soft x-ray reflectometry, hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO₂(Ti)/SiO₂/Si stacks

Element-specific structural analysis of Si/B₄C using resonant X-ray reflectivity