SOI CMOS, SiGe BiCMOS, GaAs HBT and GaAs PHEMT Technologies Characterization for Radiation-Tolerant Microwave Applications

Sotskov, Denis; Kuznetsov, A. G.; Elesin, V. V.; Usachev, Nikolay A.; Chukov, G. V.; Nikiforov, Alexander Y.

doi:10.1109/sibcon50419.2021.9438923

Cited by 5 publications

References 12 publications

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A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application

Gong,

Cheng,

et al. 2024

Circuit Theory & Apps

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Compared to silicon‐based complementary metal oxide semiconductor (CMOS), second‐generation semiconductor materials, such as gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), offer significant advantages for radio frequency (RF) applications. As communication systems become more functional, designing highly integrated on‐chip transceiver systems presents a substantial challenge, where the voltage regulator as part of the power management module is indispensable. Due to lattice defects and other issues, achieving P‐channel metal oxide semiconductor (PMOS) in GaAs pHEMT is difficult, necessitating new circuit architectures to fulfill traditional linear regulator functions. To realize wireless fidelity (WiFi) transceiver systems on chip (SoC) using compound semiconductors for superior RF performance, this paper proposes a switchable linear regulator based on a 0.25 μm GaAs pHEMT process. The proposed linear regulator consumes a quiescent current of 440 μA in no‐load conditions and regulates a 5 V supply voltage down to 2.6 V output voltage. Measured results indicate that the designed linear regulator features a current load capacity of 20 mA, a load regulation rate of 5.8 mV/mA, and a line regulation rate of 1.8 mV/V. The proposed linear regulator circuit has been applied to WiFi transceiver systems, occupying a chip area of 0.054 mm2.

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