SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C

Comparative Study of Biaxial and Uniaxial Mechanical Stress Influence on the Low Frequency Noise of Fully Depleted SOI nMOSFETs Operating in Triode and Saturation Regime

“…From figure 4 one can observe two different aspects in noise: first a 1/f aspect for frequencies below 1000 Hz, above this frequency a 1/f 2 behavior was found for all L. The 1/f 2 characteristic is associated with generation-recombination (GR) noise (14). Comparing the two strain technologies, one can note a reduction of LFN for both strain technologies in comparison to unstrained transistors for any studied channel length, being more evident for L=160 nm.…”

Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

“…Silicon-on-Insulator (SOI) transistors are prone to floating-body effects, associated with a change in the body potential (V BS ) by a supply of majority carriers, which may be generated by several physical mechanisms [1]. For example, it has recently been demonstrated that for (ultra-) thin gate oxide partially depleted (PD) SOI MOSFETs a so-called linear kink effect (LKE) can be induced by majority carriers injected in the body by electron valence-band (EVB) tunnelling [2,3].…”

“…For example, it has recently been demonstrated that for (ultra-) thin gate oxide partially depleted (PD) SOI MOSFETs a so-called linear kink effect (LKE) can be induced by majority carriers injected in the body by electron valence-band (EVB) tunnelling [2,3]. Besides kink effects in the current-voltage (I-V) characteristics, it has also been demonstrated that the low-frequency (LF) noise of SOI transistors exhibits a strong increase in the impact-ionization [1,4] and the ''linear'' kink regimes [5][6][7], which is obviously detrimental for analog applications.…”

Influência da temperatura no ruído de baixa frequência em transistores SOI de canal gradual (GC SOI) submicrométricos

“…Também é visto que para transistores com óxido de porta extremamente finos <3nm, a corrente de fuga pode ocorrer pela porta, atravessando o dielétrico através de tunelamento quântico (AGOPIAN, 2008). No estudo do ruído, esse parâmetro também é importante uma vez que, com o aumento dessa corrente de fuga, tem-se um aumento no ruído de geração e recombinação (DESSARD et al, 2002).…”

“…Um outro modelo "Engineering Lorentzian-Like Noise Model" (GUO et al, 2007) estende-se desde PD SOI até FD SOI e foi testado sob diversas condições de temperatura e polarizações de substrato em (DESSARD et al, 2002). O modelo é descrito pelas equações (83) e (84).…”