SOI RESURF LDMOS transistor using trench filled with oxide

Son, Won-So; Sohn, Young-Ho; Choi, Sie−Young

doi:10.1049/el:20031115

Cited by 17 publications

(7 citation statements)

References 1 publication

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“…As shown in Fig. 4(b), for the CT MOSFET, the field strength in the oxide trench is only 1.7×10 5 V/cm at V d = 389 V. However the field strength in the middle of the oxide trench (x = 6 µm) is increased to 8×10 5 V/cm at V d = 389 V and 1.2×10 6 V/cm at V d = 589 V for the DFPT MOSFET. Compared with the CT MOSFET in Fig.…”

Section: Device Structure and Mechanismmentioning

confidence: 89%

“…Although the voltage sustaining region is narrowed at the surface for the DFPT MOSFET, the field strength is much higher than that of the CT MOSFET. Compared with the CT MOSFET with the same V d of 389 V, the field strength in the middle of the oxide trench (x = 6 µm) increases from 4×10 5 V/cm to 9.7×10 5 V/cm for the DFPT MOSFET, as illustrated in Fig. 4(a).…”

Section: Device Structure and Mechanismmentioning

confidence: 98%

“…In order to improve the R on,sp characteristic while maintaining a high BV, the trench technologies are used in the fabrication of power lateral MOSFETs. [1][2][3][4][5][6] By implanting the oxide trench in the drift region, the power lateral MOSFETs can achieve reduced R on,sp because of the shortened cell pitch. [7][8][9] A two-dimensional analytical model is then developed to explore the physical mechanism of the oxide trench in the silicon-on-insulator (SOI) trench lateral MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

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High-voltage SOI lateral MOSFET with a dual vertical field plate

Fan¹,

Zhang²,

Luo³

et al. 2013

Chinese Phys. B

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A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (R on,sp ). The mechanism of the VFP is analyzed and the characteristics of BV and R on,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the R on,sp decreases from 366 mΩ•cm 2 to 110 mΩ•cm 2 .

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Section: Device Structure and Mechanismmentioning

confidence: 89%

Section: Device Structure and Mechanismmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-voltage SOI lateral MOSFET with a dual vertical field plate

Fan¹,

Zhang²,

Luo³

et al. 2013

Chinese Phys. B

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“…Consequently, various approaches have been reported to widen the FBSOA [4][5][6][7][8][9][10][11]. For the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT) [12], the oxide trench applied in the drift region as an 'electric field line absorber' can reduce the cell pitch [13][14][15][16] to approximately one half of the conventional device structure. The hole-bypassing gate configuration can also increase its immunity against the latch-up effect.…”

Section: Introductionmentioning

confidence: 99%

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Zhang

Luo

et al. 2013

Micro Nano Lett.

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This Letter presents a novel small-sized lateral insulated gate bipolar transistor on silicon-on-insulator substrate (SOI-LIGBT), which features a lowly doped p-type pillar alongside the oxide trench in the drift region. The variation in vertical doping termination technology is also proposed for the first time. The p-pillar layer leads to electric field reshaping in the y-direction, and homogenises current flow lines under the gate and cathode. It results in a very wide forward bias safe operating area (FBSOA) for the proposed SOI-LIGBT, which is obviously improved by over 50% compared with the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT). Moreover, at the same forward voltage drop of 1 V, the turnoff energy loss for the proposed SOI-LIGBT is reduced by 28.5 and 81.2% compared with those of DT SOI-LIGBT and the conventional SOI-LIGBT, respectively.

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“…During the short-circuit mode, IGBTs have to sustain high voltage and high current at the same time, which can cause a significant increase in the local device temperature from the high power dissipation [3]. For the deep-oxide trench SOI-LIGBT (DOT SOI-LIGBT) [4], the cell pitch is reduced to approximately one half of the conventional device structure because of an oxide trench applied in the drift region [5] and thus higher current capability and lower cost are obtained. However, the holes current flowing bypass path is quite long [6].…”

mentioning

confidence: 99%

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

et al. 2015

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A 500 V deep-oxide trench silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with improved short-circuit capability is proposed. The structure features dual trench gates: one gate (G1) extended to the buried oxide and the other gate (G2) arranged in the deep-oxide trench in the drift region. In the off-state, G2 acts as an emitter-side field plate to shield the lateral electric field from the collector side. In the on-state, negative voltage is applied to G2, leading to a hole inversion layer close to the deep-oxide trench. The hole inversion layer reroutes the hole current and provides an additional heat dissipation path. Experimental results show that the proposed structure exhibits high short-circuit immunity without degradation of the breakdown voltage. The short-circuit withstand time of the proposed structure is 1.55 times that of the conventional one, when the voltage of G2 is −5 V.

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SOI RESURF LDMOS transistor using trench filled with oxide

Cited by 17 publications

References 1 publication

High-voltage SOI lateral MOSFET with a dual vertical field plate

High-voltage SOI lateral MOSFET with a dual vertical field plate

Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

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