Sol–gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study

Structural, optical and electrical properties of low temperature grown undoped and (Al, Ga) co-doped ZnO thin films by spray pyrolysis

“…Madelung constant compared to that of Al and this may give edge for Ga to be more substituted over Al in AGZO samples [52]. The chance of this process is higher in high total doping contents, where there are lower substitutional positions in those samples [19]. Substitution of Ga with Al in AGZO at 2 at% is more effective, giving rise to more stable AGZO and denser electron concentration, which finally decreases the electrical resistivity.…”

“…These methods include chemical bath deposition [16], hydrothermal [17], spray pyrolysis [18] and sol-gel [19]. AGZO films grown by spray pyrolysis have not been much exploited [14,[19][20][21][22] despite having several advantages compared to other chemical solution methods. Chemical uniformity and stoichiometry can easily be controlled in multi-component system, and it can be adapted easily for production of large surface area films [23].…”

Optical and Morphological Studies of Ga Doped Zno Nanocrystals

“…However, GZO has the drawback of low durability in humid environment. Furthermore, expensiveness of Ga compounds is another drawback in GZO especially for mass production [4]. The volume increment of the lattice with Ga doping indicates the presence of some type of intrinsic defects of vacancies, point defects, dislocation etc.…”

Effects of substrate temperature on the structural, morphological, electrical and optical properties of Al and Ga co-doped ZnO thin films grown by DC magnetron sputtering

“…In singly-doped ZnO, Al doped ZnO (AZO) has good conductivity and chemical stability, while Ga doped ZnO (GZO) has superb humidity durability and more resistant to oxidation compared to AZO [4][5][6][7]. Thus, improvements in various properties can be expected for Al and Ga co-doped ZnO (AGZO) thin film, which make it promising and attractive for device applications.…”