2018
DOI: 10.1016/j.tsf.2017.10.049
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Sol-gel growth and characterization of In2O3 thin films

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Cited by 10 publications
(2 citation statements)
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“…[1][2][3][4][5] Thin films of these materials have been prepared by a wide range of methods including sputtering, atomic-layer deposition, electrodeposition, combustion, and solution-based methods. [6][7][8][9][10][11][12] Metal oxides lend themselves to solution processing, as a range of relatively simple precursors can be prepared, exploiting the advantages of these deposition methods, including low cost and large scale coating. [13][14][15] However, the vast majority of solution methods rely on thermal annealing at temperatures typically above 200 ºC and for durations of an hour and more to transform the metal precursors into the desired semiconductor thin films.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] Thin films of these materials have been prepared by a wide range of methods including sputtering, atomic-layer deposition, electrodeposition, combustion, and solution-based methods. [6][7][8][9][10][11][12] Metal oxides lend themselves to solution processing, as a range of relatively simple precursors can be prepared, exploiting the advantages of these deposition methods, including low cost and large scale coating. [13][14][15] However, the vast majority of solution methods rely on thermal annealing at temperatures typically above 200 ºC and for durations of an hour and more to transform the metal precursors into the desired semiconductor thin films.…”
Section: Introductionmentioning
confidence: 99%
“…Os processos de dopagem na matriz de óxidos constituem uma abordagem útil para modificar as propriedades do material, como modulação da energia de gap, estabilização de determinada fase, controle da morfologia das partículas e alteração de densidade de portadores de carga na superfície (APOSTOLOV; APOSTOLOVA; WESSELINOWA, 2018;ÖKTE, 2014;OUACHA;KLEINEBERG;ALBRITHEN, 2017;XU et al, 2018). Estudos abordando o efeito da dopagem na estrutura do In2O3 foram realizados por de Xu et al (XU et al, 2018), no qual propuseram uma seleção de metais de transição como dopantes para obter uma maior densidade de portadores de carga e transparência óptica.…”
Section: Modificação Da Rede Por Dopagemunclassified